Fabrication and characterization of reactive ion beam etched SiC gratings : Proceedings of the 4th international conference on synchrotron radiation instrumentation
Ishiguro, E. ; Yamashita, K. ; Ohashi, H. ; Sakurai, M. ; Aita, O. ; Watanabe, M. ; Sano, K. ; Koeda, M. ; Nagano, T.
[S.l.] : American Institute of Physics (AIP)
Published 1992
[S.l.] : American Institute of Physics (AIP)
Published 1992
| ISSN: |
1089-7623
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| Source: |
AIP Digital Archive
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| Topics: |
Physics
Electrical Engineering, Measurement and Control Technology
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| Notes: |
A holographic SiC grating has been fabricated by means of reactive ion beam etching in Ar+CHF3 mixture and by using photoresist as an etching mask. The etch rates of SiC and photoresist depend on the CHF3 concentration in Ar+CHF3 mixture. A maximum value for a ratio of the etch rate of SiC to that of photoresist was found to be 1.29 for 67%Ar+33%CHF3 mixture. Diffraction efficiency of an ion-beam etched grating of 1200 l/mm grooves coated with Au was measured by using synchrotron radiation and the Al kα emission line from an x-ray tube. The diffraction efficiency of the first order was 4.5%–9.3% in the soft x-ray region between 8.34 and 120 A(ring) with a small amount of the higher order and the scattered light components. In addition, it is demonstrated that SiC can be etched in SF6 gas by synchrotron radiation excitation.
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| Type of Medium: |
Electronic Resource
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| URL: |