Ar ion beam and CCl4 reactive ion etching: A comparison of etching damage and of damage passivation by hydrogen
Mu, X. C. ; Fonash, S. J. ; Yang, B. Y. ; Vedam, K. ; Rohatgi, A. ; Rieger, J.
[S.l.] : American Institute of Physics (AIP)
Published 1985
[S.l.] : American Institute of Physics (AIP)
Published 1985
| ISSN: |
1089-7550
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|---|---|
| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
Damage produced in single-crystal silicon by two distinctly different dry etching techniques, Ar ion beam etching and CCl4 reactive ion etching is characterized and compared using spectroscopic ellipsometry, reflected high- energy electron diffraction, and current-voltage (I-V) characteristics of Au contacts to the etched Si. Secondary ion mass spectroscopy is also used to further characterize the CCl4 exposed samples. The effectiveness of low-energy hydrogen ion implants in passivating this dry etching induced damage is explored. The restoration of I-V characteristics caused by H+ implants is correlated with the evolution of the spectroscopic ellipsometry, reflected high- energy electron diffraction, and secondary ion mass spectroscopy data.
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| Type of Medium: |
Electronic Resource
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| URL: |