Mu, X. C., Fonash, S. J., Yang, B. Y., Vedam, K., Rohatgi, A., & Rieger, J. (1985). Ar ion beam and CCl4 reactive ion etching: A comparison of etching damage and of damage passivation by hydrogen. American Institute of Physics (AIP).
Chicago Style (17th ed.) CitationMu, X. C., S. J. Fonash, B. Y. Yang, K. Vedam, A. Rohatgi, and J. Rieger. Ar Ion Beam and CCl4 Reactive Ion Etching: A Comparison of Etching Damage and of Damage Passivation by Hydrogen. [S.l.]: American Institute of Physics (AIP), 1985.
MLA (9th ed.) CitationMu, X. C., et al. Ar Ion Beam and CCl4 Reactive Ion Etching: A Comparison of Etching Damage and of Damage Passivation by Hydrogen. American Institute of Physics (AIP), 1985.
Warning: These citations may not always be 100% accurate.