Ar ion beam and CCl4 reactive ion etching: A comparison of etching damage and of damage passivation by hydrogen - Mu, X. C.; Fonash, S. J.; Yang, B. Y.; Vedam, K.; Rohatgi, A.; Rieger, J. (American Institute of Physics (AIP), 1985)
http://dx.doi.org/10.1063/1.335513
Keywords: U