Modulated photocarrier grating technique for diffusion length measurement in amorphous semiconductors
Hattori, K. ; Koji, Y. ; Fukuda, S. ; Ma, W. ; Okamoto, H. ; Hamakawa, Y.
[S.l.] : American Institute of Physics (AIP)
Published 1993
[S.l.] : American Institute of Physics (AIP)
Published 1993
| ISSN: |
1089-7550
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|---|---|
| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
This article presents a method for investigating the diffusion of photocarriers in semiconductors by the analysis of phase shift between a temporally modulated illumination grating and its inducing photocurrent. Experiments on hydrogenated amorphous silicon prove that an accurate measurement of the diffusion length as well as an identification of ambipolar or nonambipolar diffusion can be acquired by using this technique.
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| Type of Medium: |
Electronic Resource
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| URL: |
| _version_ | 1798289657719422977 |
|---|---|
| autor | Hattori, K. Koji, Y. Fukuda, S. Ma, W. Okamoto, H. Hamakawa, Y. |
| autorsonst | Hattori, K. Koji, Y. Fukuda, S. Ma, W. Okamoto, H. Hamakawa, Y. |
| book_url | http://dx.doi.org/10.1063/1.352894 |
| datenlieferant | nat_lic_papers |
| hauptsatz | hsatz_simple |
| identnr | NLZ218591500 |
| iqvoc_descriptor_title | iqvoc_00000625:semiconductors |
| issn | 1089-7550 |
| journal_name | Journal of Applied Physics |
| materialart | 1 |
| notes | This article presents a method for investigating the diffusion of photocarriers in semiconductors by the analysis of phase shift between a temporally modulated illumination grating and its inducing photocurrent. Experiments on hydrogenated amorphous silicon prove that an accurate measurement of the diffusion length as well as an identification of ambipolar or nonambipolar diffusion can be acquired by using this technique. |
| package_name | American Institute of Physics (AIP) |
| publikationsjahr_anzeige | 1993 |
| publikationsjahr_facette | 1993 |
| publikationsjahr_intervall | 8009:1990-1994 |
| publikationsjahr_sort | 1993 |
| publikationsort | [S.l.] |
| publisher | American Institute of Physics (AIP) |
| reference | 73 (1993), S. 3846-3851 |
| search_space | articles |
| shingle_author_1 | Hattori, K. Koji, Y. Fukuda, S. Ma, W. Okamoto, H. Hamakawa, Y. |
| shingle_author_2 | Hattori, K. Koji, Y. Fukuda, S. Ma, W. Okamoto, H. Hamakawa, Y. |
| shingle_author_3 | Hattori, K. Koji, Y. Fukuda, S. Ma, W. Okamoto, H. Hamakawa, Y. |
| shingle_author_4 | Hattori, K. Koji, Y. Fukuda, S. Ma, W. Okamoto, H. Hamakawa, Y. |
| shingle_catch_all_1 | Hattori, K. Koji, Y. Fukuda, S. Ma, W. Okamoto, H. Hamakawa, Y. Modulated photocarrier grating technique for diffusion length measurement in amorphous semiconductors This article presents a method for investigating the diffusion of photocarriers in semiconductors by the analysis of phase shift between a temporally modulated illumination grating and its inducing photocurrent. Experiments on hydrogenated amorphous silicon prove that an accurate measurement of the diffusion length as well as an identification of ambipolar or nonambipolar diffusion can be acquired by using this technique. 1089-7550 10897550 American Institute of Physics (AIP) |
| shingle_catch_all_2 | Hattori, K. Koji, Y. Fukuda, S. Ma, W. Okamoto, H. Hamakawa, Y. Modulated photocarrier grating technique for diffusion length measurement in amorphous semiconductors This article presents a method for investigating the diffusion of photocarriers in semiconductors by the analysis of phase shift between a temporally modulated illumination grating and its inducing photocurrent. Experiments on hydrogenated amorphous silicon prove that an accurate measurement of the diffusion length as well as an identification of ambipolar or nonambipolar diffusion can be acquired by using this technique. 1089-7550 10897550 American Institute of Physics (AIP) |
| shingle_catch_all_3 | Hattori, K. Koji, Y. Fukuda, S. Ma, W. Okamoto, H. Hamakawa, Y. Modulated photocarrier grating technique for diffusion length measurement in amorphous semiconductors This article presents a method for investigating the diffusion of photocarriers in semiconductors by the analysis of phase shift between a temporally modulated illumination grating and its inducing photocurrent. Experiments on hydrogenated amorphous silicon prove that an accurate measurement of the diffusion length as well as an identification of ambipolar or nonambipolar diffusion can be acquired by using this technique. 1089-7550 10897550 American Institute of Physics (AIP) |
| shingle_catch_all_4 | Hattori, K. Koji, Y. Fukuda, S. Ma, W. Okamoto, H. Hamakawa, Y. Modulated photocarrier grating technique for diffusion length measurement in amorphous semiconductors This article presents a method for investigating the diffusion of photocarriers in semiconductors by the analysis of phase shift between a temporally modulated illumination grating and its inducing photocurrent. Experiments on hydrogenated amorphous silicon prove that an accurate measurement of the diffusion length as well as an identification of ambipolar or nonambipolar diffusion can be acquired by using this technique. 1089-7550 10897550 American Institute of Physics (AIP) |
| shingle_title_1 | Modulated photocarrier grating technique for diffusion length measurement in amorphous semiconductors |
| shingle_title_2 | Modulated photocarrier grating technique for diffusion length measurement in amorphous semiconductors |
| shingle_title_3 | Modulated photocarrier grating technique for diffusion length measurement in amorphous semiconductors |
| shingle_title_4 | Modulated photocarrier grating technique for diffusion length measurement in amorphous semiconductors |
| sigel_instance_filter | dkfz geomar wilbert ipn albert |
| source_archive | AIP Digital Archive |
| timestamp | 2024-05-06T08:04:18.635Z |
| titel | Modulated photocarrier grating technique for diffusion length measurement in amorphous semiconductors |
| titel_suche | Modulated photocarrier grating technique for diffusion length measurement in amorphous semiconductors |
| topic | U |
| uid | nat_lic_papers_NLZ218591500 |