Modulated photocarrier grating technique for diffusion length measurement in amorphous semiconductors

Hattori, K. ; Koji, Y. ; Fukuda, S. ; Ma, W. ; Okamoto, H. ; Hamakawa, Y.

[S.l.] : American Institute of Physics (AIP)
Published 1993
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
This article presents a method for investigating the diffusion of photocarriers in semiconductors by the analysis of phase shift between a temporally modulated illumination grating and its inducing photocurrent. Experiments on hydrogenated amorphous silicon prove that an accurate measurement of the diffusion length as well as an identification of ambipolar or nonambipolar diffusion can be acquired by using this technique.
Type of Medium:
Electronic Resource
URL: