Efficient GaInAsSb/AlGaAsSb diode lasers emitting at 2.29 μm
| ISSN: |
1077-3118
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| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
Diode lasers emitting at 2.29 μm have been fabricated from lattice-matched double heterostructures having a GaInAsSb active layer and AlGaAsSb confining layers grown by molecular beam epitaxy on GaSb substrates. For pulsed room-temperature operation these devices have exhibited threshold current densities as low as 1.7 kA/cm2 and differential quantum efficiencies as high as 18% per facet, the highest room-temperature efficiency reported for any semiconductor diode laser emitting beyond 2 μm.
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| Type of Medium: |
Electronic Resource
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| URL: |
| _version_ | 1798289630771019777 |
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| autor | Eglash, S. J. Choi, H. K. |
| autorsonst | Eglash, S. J. Choi, H. K. |
| book_url | http://dx.doi.org/10.1063/1.103462 |
| datenlieferant | nat_lic_papers |
| hauptsatz | hsatz_simple |
| identnr | NLZ21828554X |
| iqvoc_descriptor_title | iqvoc_00000633:diode |
| issn | 1077-3118 |
| journal_name | Applied Physics Letters |
| materialart | 1 |
| notes | Diode lasers emitting at 2.29 μm have been fabricated from lattice-matched double heterostructures having a GaInAsSb active layer and AlGaAsSb confining layers grown by molecular beam epitaxy on GaSb substrates. For pulsed room-temperature operation these devices have exhibited threshold current densities as low as 1.7 kA/cm2 and differential quantum efficiencies as high as 18% per facet, the highest room-temperature efficiency reported for any semiconductor diode laser emitting beyond 2 μm. |
| package_name | American Institute of Physics (AIP) |
| publikationsjahr_anzeige | 1990 |
| publikationsjahr_facette | 1990 |
| publikationsjahr_intervall | 8009:1990-1994 |
| publikationsjahr_sort | 1990 |
| publikationsort | Woodbury, NY |
| publisher | American Institute of Physics (AIP) |
| reference | 57 (1990), S. 1292-1294 |
| search_space | articles |
| shingle_author_1 | Eglash, S. J. Choi, H. K. |
| shingle_author_2 | Eglash, S. J. Choi, H. K. |
| shingle_author_3 | Eglash, S. J. Choi, H. K. |
| shingle_author_4 | Eglash, S. J. Choi, H. K. |
| shingle_catch_all_1 | Eglash, S. J. Choi, H. K. Efficient GaInAsSb/AlGaAsSb diode lasers emitting at 2.29 μm Diode lasers emitting at 2.29 μm have been fabricated from lattice-matched double heterostructures having a GaInAsSb active layer and AlGaAsSb confining layers grown by molecular beam epitaxy on GaSb substrates. For pulsed room-temperature operation these devices have exhibited threshold current densities as low as 1.7 kA/cm2 and differential quantum efficiencies as high as 18% per facet, the highest room-temperature efficiency reported for any semiconductor diode laser emitting beyond 2 μm. 1077-3118 10773118 American Institute of Physics (AIP) |
| shingle_catch_all_2 | Eglash, S. J. Choi, H. K. Efficient GaInAsSb/AlGaAsSb diode lasers emitting at 2.29 μm Diode lasers emitting at 2.29 μm have been fabricated from lattice-matched double heterostructures having a GaInAsSb active layer and AlGaAsSb confining layers grown by molecular beam epitaxy on GaSb substrates. For pulsed room-temperature operation these devices have exhibited threshold current densities as low as 1.7 kA/cm2 and differential quantum efficiencies as high as 18% per facet, the highest room-temperature efficiency reported for any semiconductor diode laser emitting beyond 2 μm. 1077-3118 10773118 American Institute of Physics (AIP) |
| shingle_catch_all_3 | Eglash, S. J. Choi, H. K. Efficient GaInAsSb/AlGaAsSb diode lasers emitting at 2.29 μm Diode lasers emitting at 2.29 μm have been fabricated from lattice-matched double heterostructures having a GaInAsSb active layer and AlGaAsSb confining layers grown by molecular beam epitaxy on GaSb substrates. For pulsed room-temperature operation these devices have exhibited threshold current densities as low as 1.7 kA/cm2 and differential quantum efficiencies as high as 18% per facet, the highest room-temperature efficiency reported for any semiconductor diode laser emitting beyond 2 μm. 1077-3118 10773118 American Institute of Physics (AIP) |
| shingle_catch_all_4 | Eglash, S. J. Choi, H. K. Efficient GaInAsSb/AlGaAsSb diode lasers emitting at 2.29 μm Diode lasers emitting at 2.29 μm have been fabricated from lattice-matched double heterostructures having a GaInAsSb active layer and AlGaAsSb confining layers grown by molecular beam epitaxy on GaSb substrates. For pulsed room-temperature operation these devices have exhibited threshold current densities as low as 1.7 kA/cm2 and differential quantum efficiencies as high as 18% per facet, the highest room-temperature efficiency reported for any semiconductor diode laser emitting beyond 2 μm. 1077-3118 10773118 American Institute of Physics (AIP) |
| shingle_title_1 | Efficient GaInAsSb/AlGaAsSb diode lasers emitting at 2.29 μm |
| shingle_title_2 | Efficient GaInAsSb/AlGaAsSb diode lasers emitting at 2.29 μm |
| shingle_title_3 | Efficient GaInAsSb/AlGaAsSb diode lasers emitting at 2.29 μm |
| shingle_title_4 | Efficient GaInAsSb/AlGaAsSb diode lasers emitting at 2.29 μm |
| sigel_instance_filter | dkfz geomar wilbert ipn albert |
| source_archive | AIP Digital Archive |
| timestamp | 2024-05-06T08:03:54.239Z |
| titel | Efficient GaInAsSb/AlGaAsSb diode lasers emitting at 2.29 μm |
| titel_suche | Efficient GaInAsSb/AlGaAsSb diode lasers emitting at 2.29 μm |
| topic | U |
| uid | nat_lic_papers_NLZ21828554X |