APA (7th ed.) Citation

Eglash, S. J., & Choi, H. K. (1990). Efficient GaInAsSb/AlGaAsSb diode lasers emitting at 2.29 μm. American Institute of Physics (AIP).

Chicago Style (17th ed.) Citation

Eglash, S. J., and H. K. Choi. Efficient GaInAsSb/AlGaAsSb Diode Lasers Emitting at 2.29 μm. Woodbury, NY: American Institute of Physics (AIP), 1990.

MLA (9th ed.) Citation

Eglash, S. J., and H. K. Choi. Efficient GaInAsSb/AlGaAsSb Diode Lasers Emitting at 2.29 μm. American Institute of Physics (AIP), 1990.