Efficient GaInAsSb/AlGaAsSb diode lasers emitting at 2.29 μm
| ISSN: |
1077-3118
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| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
Diode lasers emitting at 2.29 μm have been fabricated from lattice-matched double heterostructures having a GaInAsSb active layer and AlGaAsSb confining layers grown by molecular beam epitaxy on GaSb substrates. For pulsed room-temperature operation these devices have exhibited threshold current densities as low as 1.7 kA/cm2 and differential quantum efficiencies as high as 18% per facet, the highest room-temperature efficiency reported for any semiconductor diode laser emitting beyond 2 μm.
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| Type of Medium: |
Electronic Resource
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| URL: |