AlInGaAs/AlGaAs separate-confinement heterostructure strained single quantum well diode lasers grown by organometallic vapor phase epitaxy
Wang, C. A. ; Walpole, J. N. ; Missaggia, L. J. ; Donnelly, J. P. ; Choi, H. K.
Woodbury, NY : American Institute of Physics (AIP)
Published 1991
Woodbury, NY : American Institute of Physics (AIP)
Published 1991
| ISSN: |
1077-3118
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|---|---|
| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
Separate-confinement heterostructure diode lasers containing a strained Al0.18In0.20Ga0.62 As single quantum well active layer and Al0.25Ga0.75As confining layers have been fabricated from structures grown on GaAs substrates by low-pressure organometallic vapor phase epitaxy. The emission wavelength of these devices is 814 nm. Threshold current density is as low as 103 A cm−2 for cavity length L=1500 μm, and differential quantum efficiency as high as 90% for L=280 μm. The characteristic temperature T0 is 214 K between 10 and 40 °C, and 159 K between 40 and 80 °C. Preliminary tests of cw operation suggest that these lasers are more reliable than AlGaAs/AlGaAs lasers.
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| Type of Medium: |
Electronic Resource
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| URL: |
| _version_ | 1798289629789552640 |
|---|---|
| autor | Wang, C. A. Walpole, J. N. Missaggia, L. J. Donnelly, J. P. Choi, H. K. |
| autorsonst | Wang, C. A. Walpole, J. N. Missaggia, L. J. Donnelly, J. P. Choi, H. K. |
| book_url | http://dx.doi.org/10.1063/1.104928 |
| datenlieferant | nat_lic_papers |
| hauptsatz | hsatz_simple |
| identnr | NLZ21827291X |
| iqvoc_descriptor_title | iqvoc_00000633:diode |
| issn | 1077-3118 |
| journal_name | Applied Physics Letters |
| materialart | 1 |
| notes | Separate-confinement heterostructure diode lasers containing a strained Al0.18In0.20Ga0.62 As single quantum well active layer and Al0.25Ga0.75As confining layers have been fabricated from structures grown on GaAs substrates by low-pressure organometallic vapor phase epitaxy. The emission wavelength of these devices is 814 nm. Threshold current density is as low as 103 A cm−2 for cavity length L=1500 μm, and differential quantum efficiency as high as 90% for L=280 μm. The characteristic temperature T0 is 214 K between 10 and 40 °C, and 159 K between 40 and 80 °C. Preliminary tests of cw operation suggest that these lasers are more reliable than AlGaAs/AlGaAs lasers. |
| package_name | American Institute of Physics (AIP) |
| publikationsjahr_anzeige | 1991 |
| publikationsjahr_facette | 1991 |
| publikationsjahr_intervall | 8009:1990-1994 |
| publikationsjahr_sort | 1991 |
| publikationsort | Woodbury, NY |
| publisher | American Institute of Physics (AIP) |
| reference | 58 (1991), S. 2208-2210 |
| search_space | articles |
| shingle_author_1 | Wang, C. A. Walpole, J. N. Missaggia, L. J. Donnelly, J. P. Choi, H. K. |
| shingle_author_2 | Wang, C. A. Walpole, J. N. Missaggia, L. J. Donnelly, J. P. Choi, H. K. |
| shingle_author_3 | Wang, C. A. Walpole, J. N. Missaggia, L. J. Donnelly, J. P. Choi, H. K. |
| shingle_author_4 | Wang, C. A. Walpole, J. N. Missaggia, L. J. Donnelly, J. P. Choi, H. K. |
| shingle_catch_all_1 | Wang, C. A. Walpole, J. N. Missaggia, L. J. Donnelly, J. P. Choi, H. K. AlInGaAs/AlGaAs separate-confinement heterostructure strained single quantum well diode lasers grown by organometallic vapor phase epitaxy Separate-confinement heterostructure diode lasers containing a strained Al0.18In0.20Ga0.62 As single quantum well active layer and Al0.25Ga0.75As confining layers have been fabricated from structures grown on GaAs substrates by low-pressure organometallic vapor phase epitaxy. The emission wavelength of these devices is 814 nm. Threshold current density is as low as 103 A cm−2 for cavity length L=1500 μm, and differential quantum efficiency as high as 90% for L=280 μm. The characteristic temperature T0 is 214 K between 10 and 40 °C, and 159 K between 40 and 80 °C. Preliminary tests of cw operation suggest that these lasers are more reliable than AlGaAs/AlGaAs lasers. 1077-3118 10773118 American Institute of Physics (AIP) |
| shingle_catch_all_2 | Wang, C. A. Walpole, J. N. Missaggia, L. J. Donnelly, J. P. Choi, H. K. AlInGaAs/AlGaAs separate-confinement heterostructure strained single quantum well diode lasers grown by organometallic vapor phase epitaxy Separate-confinement heterostructure diode lasers containing a strained Al0.18In0.20Ga0.62 As single quantum well active layer and Al0.25Ga0.75As confining layers have been fabricated from structures grown on GaAs substrates by low-pressure organometallic vapor phase epitaxy. The emission wavelength of these devices is 814 nm. Threshold current density is as low as 103 A cm−2 for cavity length L=1500 μm, and differential quantum efficiency as high as 90% for L=280 μm. The characteristic temperature T0 is 214 K between 10 and 40 °C, and 159 K between 40 and 80 °C. Preliminary tests of cw operation suggest that these lasers are more reliable than AlGaAs/AlGaAs lasers. 1077-3118 10773118 American Institute of Physics (AIP) |
| shingle_catch_all_3 | Wang, C. A. Walpole, J. N. Missaggia, L. J. Donnelly, J. P. Choi, H. K. AlInGaAs/AlGaAs separate-confinement heterostructure strained single quantum well diode lasers grown by organometallic vapor phase epitaxy Separate-confinement heterostructure diode lasers containing a strained Al0.18In0.20Ga0.62 As single quantum well active layer and Al0.25Ga0.75As confining layers have been fabricated from structures grown on GaAs substrates by low-pressure organometallic vapor phase epitaxy. The emission wavelength of these devices is 814 nm. Threshold current density is as low as 103 A cm−2 for cavity length L=1500 μm, and differential quantum efficiency as high as 90% for L=280 μm. The characteristic temperature T0 is 214 K between 10 and 40 °C, and 159 K between 40 and 80 °C. Preliminary tests of cw operation suggest that these lasers are more reliable than AlGaAs/AlGaAs lasers. 1077-3118 10773118 American Institute of Physics (AIP) |
| shingle_catch_all_4 | Wang, C. A. Walpole, J. N. Missaggia, L. J. Donnelly, J. P. Choi, H. K. AlInGaAs/AlGaAs separate-confinement heterostructure strained single quantum well diode lasers grown by organometallic vapor phase epitaxy Separate-confinement heterostructure diode lasers containing a strained Al0.18In0.20Ga0.62 As single quantum well active layer and Al0.25Ga0.75As confining layers have been fabricated from structures grown on GaAs substrates by low-pressure organometallic vapor phase epitaxy. The emission wavelength of these devices is 814 nm. Threshold current density is as low as 103 A cm−2 for cavity length L=1500 μm, and differential quantum efficiency as high as 90% for L=280 μm. The characteristic temperature T0 is 214 K between 10 and 40 °C, and 159 K between 40 and 80 °C. Preliminary tests of cw operation suggest that these lasers are more reliable than AlGaAs/AlGaAs lasers. 1077-3118 10773118 American Institute of Physics (AIP) |
| shingle_title_1 | AlInGaAs/AlGaAs separate-confinement heterostructure strained single quantum well diode lasers grown by organometallic vapor phase epitaxy |
| shingle_title_2 | AlInGaAs/AlGaAs separate-confinement heterostructure strained single quantum well diode lasers grown by organometallic vapor phase epitaxy |
| shingle_title_3 | AlInGaAs/AlGaAs separate-confinement heterostructure strained single quantum well diode lasers grown by organometallic vapor phase epitaxy |
| shingle_title_4 | AlInGaAs/AlGaAs separate-confinement heterostructure strained single quantum well diode lasers grown by organometallic vapor phase epitaxy |
| sigel_instance_filter | dkfz geomar wilbert ipn albert |
| source_archive | AIP Digital Archive |
| timestamp | 2024-05-06T08:03:52.093Z |
| titel | AlInGaAs/AlGaAs separate-confinement heterostructure strained single quantum well diode lasers grown by organometallic vapor phase epitaxy |
| titel_suche | AlInGaAs/AlGaAs separate-confinement heterostructure strained single quantum well diode lasers grown by organometallic vapor phase epitaxy |
| topic | U |
| uid | nat_lic_papers_NLZ21827291X |