AlInGaAs/AlGaAs separate-confinement heterostructure strained single quantum well diode lasers grown by organometallic vapor phase epitaxy
Wang, C. A. ; Walpole, J. N. ; Missaggia, L. J. ; Donnelly, J. P. ; Choi, H. K.
Woodbury, NY : American Institute of Physics (AIP)
Published 1991
Woodbury, NY : American Institute of Physics (AIP)
Published 1991
| ISSN: |
1077-3118
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| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
Separate-confinement heterostructure diode lasers containing a strained Al0.18In0.20Ga0.62 As single quantum well active layer and Al0.25Ga0.75As confining layers have been fabricated from structures grown on GaAs substrates by low-pressure organometallic vapor phase epitaxy. The emission wavelength of these devices is 814 nm. Threshold current density is as low as 103 A cm−2 for cavity length L=1500 μm, and differential quantum efficiency as high as 90% for L=280 μm. The characteristic temperature T0 is 214 K between 10 and 40 °C, and 159 K between 40 and 80 °C. Preliminary tests of cw operation suggest that these lasers are more reliable than AlGaAs/AlGaAs lasers.
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| Type of Medium: |
Electronic Resource
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| URL: |