APA (7th ed.) Citation

Wang, C. A., Walpole, J. N., Missaggia, L. J., Donnelly, J. P., & Choi, H. K. (1991). AlInGaAs/AlGaAs separate-confinement heterostructure strained single quantum well diode lasers grown by organometallic vapor phase epitaxy. American Institute of Physics (AIP).

Chicago Style (17th ed.) Citation

Wang, C. A., J. N. Walpole, L. J. Missaggia, J. P. Donnelly, and H. K. Choi. AlInGaAs/AlGaAs Separate-confinement Heterostructure Strained Single Quantum Well Diode Lasers Grown by Organometallic Vapor Phase Epitaxy. Woodbury, NY: American Institute of Physics (AIP), 1991.

MLA (9th ed.) Citation

Wang, C. A., et al. AlInGaAs/AlGaAs Separate-confinement Heterostructure Strained Single Quantum Well Diode Lasers Grown by Organometallic Vapor Phase Epitaxy. American Institute of Physics (AIP), 1991.