Subsurface hydrogenated amorphous silicon to μc-hydrogenated silicon transformation during magnetron sputter deposition determined by spectroscopic ellipsometry
Yang, Y. H. ; Katiyar, M. ; Feng, G. F. ; Maley, N. ; Abelson, J. R.
Woodbury, NY : American Institute of Physics (AIP)
Published 1994
Woodbury, NY : American Institute of Physics (AIP)
Published 1994
| ISSN: |
1077-3118
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|---|---|
| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
We use in situ spectroscopic ellipsometry to analyze the microstructure of the μc-Si:H/a-Si:H interface deposited by reactive magnetron sputtering of a Si target in (Ar+H2). We increase the hydrogen pressure to promote μc-Si:H formation and observe several effects. Initially, H penetrates ∼45 A(ring) into the a-Si:H substrate and increases its hydrogen content. Then ∼55 A(ring) of hydrogen-rich a-Si:H deposits. Finally, μc-Si:H nucleates on top of this ∼100 A(ring) thick, high H-content a-Si:H interface layer. As μc-Si:H grows, the thickness of the amorphous interface layer decreases by ∼40 A(ring); the void fraction in the μc-Si:H layer is always ≤15 vol %, ruling out the possibility that the a-Si:H is etched away. These results suggest that a-Si:H can be transformed into μc-Si:H in a subsurface region under appropriate conditions. © 1994 American Institue of Physics.
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| Type of Medium: |
Electronic Resource
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| URL: |
| _version_ | 1798289620768653313 |
|---|---|
| autor | Yang, Y. H. Katiyar, M. Feng, G. F. Maley, N. Abelson, J. R. |
| autorsonst | Yang, Y. H. Katiyar, M. Feng, G. F. Maley, N. Abelson, J. R. |
| book_url | http://dx.doi.org/10.1063/1.113003 |
| datenlieferant | nat_lic_papers |
| hauptsatz | hsatz_simple |
| identnr | NLZ218198213 |
| issn | 1077-3118 |
| journal_name | Applied Physics Letters |
| materialart | 1 |
| notes | We use in situ spectroscopic ellipsometry to analyze the microstructure of the μc-Si:H/a-Si:H interface deposited by reactive magnetron sputtering of a Si target in (Ar+H2). We increase the hydrogen pressure to promote μc-Si:H formation and observe several effects. Initially, H penetrates ∼45 A(ring) into the a-Si:H substrate and increases its hydrogen content. Then ∼55 A(ring) of hydrogen-rich a-Si:H deposits. Finally, μc-Si:H nucleates on top of this ∼100 A(ring) thick, high H-content a-Si:H interface layer. As μc-Si:H grows, the thickness of the amorphous interface layer decreases by ∼40 A(ring); the void fraction in the μc-Si:H layer is always ≤15 vol %, ruling out the possibility that the a-Si:H is etched away. These results suggest that a-Si:H can be transformed into μc-Si:H in a subsurface region under appropriate conditions. © 1994 American Institue of Physics. |
| package_name | American Institute of Physics (AIP) |
| publikationsjahr_anzeige | 1994 |
| publikationsjahr_facette | 1994 |
| publikationsjahr_intervall | 8009:1990-1994 |
| publikationsjahr_sort | 1994 |
| publikationsort | Woodbury, NY |
| publisher | American Institute of Physics (AIP) |
| reference | 65 (1994), S. 1769-1771 |
| search_space | articles |
| shingle_author_1 | Yang, Y. H. Katiyar, M. Feng, G. F. Maley, N. Abelson, J. R. |
| shingle_author_2 | Yang, Y. H. Katiyar, M. Feng, G. F. Maley, N. Abelson, J. R. |
| shingle_author_3 | Yang, Y. H. Katiyar, M. Feng, G. F. Maley, N. Abelson, J. R. |
| shingle_author_4 | Yang, Y. H. Katiyar, M. Feng, G. F. Maley, N. Abelson, J. R. |
| shingle_catch_all_1 | Yang, Y. H. Katiyar, M. Feng, G. F. Maley, N. Abelson, J. R. Subsurface hydrogenated amorphous silicon to μc-hydrogenated silicon transformation during magnetron sputter deposition determined by spectroscopic ellipsometry We use in situ spectroscopic ellipsometry to analyze the microstructure of the μc-Si:H/a-Si:H interface deposited by reactive magnetron sputtering of a Si target in (Ar+H2). We increase the hydrogen pressure to promote μc-Si:H formation and observe several effects. Initially, H penetrates ∼45 A(ring) into the a-Si:H substrate and increases its hydrogen content. Then ∼55 A(ring) of hydrogen-rich a-Si:H deposits. Finally, μc-Si:H nucleates on top of this ∼100 A(ring) thick, high H-content a-Si:H interface layer. As μc-Si:H grows, the thickness of the amorphous interface layer decreases by ∼40 A(ring); the void fraction in the μc-Si:H layer is always ≤15 vol %, ruling out the possibility that the a-Si:H is etched away. These results suggest that a-Si:H can be transformed into μc-Si:H in a subsurface region under appropriate conditions. © 1994 American Institue of Physics. 1077-3118 10773118 American Institute of Physics (AIP) |
| shingle_catch_all_2 | Yang, Y. H. Katiyar, M. Feng, G. F. Maley, N. Abelson, J. R. Subsurface hydrogenated amorphous silicon to μc-hydrogenated silicon transformation during magnetron sputter deposition determined by spectroscopic ellipsometry We use in situ spectroscopic ellipsometry to analyze the microstructure of the μc-Si:H/a-Si:H interface deposited by reactive magnetron sputtering of a Si target in (Ar+H2). We increase the hydrogen pressure to promote μc-Si:H formation and observe several effects. Initially, H penetrates ∼45 A(ring) into the a-Si:H substrate and increases its hydrogen content. Then ∼55 A(ring) of hydrogen-rich a-Si:H deposits. Finally, μc-Si:H nucleates on top of this ∼100 A(ring) thick, high H-content a-Si:H interface layer. As μc-Si:H grows, the thickness of the amorphous interface layer decreases by ∼40 A(ring); the void fraction in the μc-Si:H layer is always ≤15 vol %, ruling out the possibility that the a-Si:H is etched away. These results suggest that a-Si:H can be transformed into μc-Si:H in a subsurface region under appropriate conditions. © 1994 American Institue of Physics. 1077-3118 10773118 American Institute of Physics (AIP) |
| shingle_catch_all_3 | Yang, Y. H. Katiyar, M. Feng, G. F. Maley, N. Abelson, J. R. Subsurface hydrogenated amorphous silicon to μc-hydrogenated silicon transformation during magnetron sputter deposition determined by spectroscopic ellipsometry We use in situ spectroscopic ellipsometry to analyze the microstructure of the μc-Si:H/a-Si:H interface deposited by reactive magnetron sputtering of a Si target in (Ar+H2). We increase the hydrogen pressure to promote μc-Si:H formation and observe several effects. Initially, H penetrates ∼45 A(ring) into the a-Si:H substrate and increases its hydrogen content. Then ∼55 A(ring) of hydrogen-rich a-Si:H deposits. Finally, μc-Si:H nucleates on top of this ∼100 A(ring) thick, high H-content a-Si:H interface layer. As μc-Si:H grows, the thickness of the amorphous interface layer decreases by ∼40 A(ring); the void fraction in the μc-Si:H layer is always ≤15 vol %, ruling out the possibility that the a-Si:H is etched away. These results suggest that a-Si:H can be transformed into μc-Si:H in a subsurface region under appropriate conditions. © 1994 American Institue of Physics. 1077-3118 10773118 American Institute of Physics (AIP) |
| shingle_catch_all_4 | Yang, Y. H. Katiyar, M. Feng, G. F. Maley, N. Abelson, J. R. Subsurface hydrogenated amorphous silicon to μc-hydrogenated silicon transformation during magnetron sputter deposition determined by spectroscopic ellipsometry We use in situ spectroscopic ellipsometry to analyze the microstructure of the μc-Si:H/a-Si:H interface deposited by reactive magnetron sputtering of a Si target in (Ar+H2). We increase the hydrogen pressure to promote μc-Si:H formation and observe several effects. Initially, H penetrates ∼45 A(ring) into the a-Si:H substrate and increases its hydrogen content. Then ∼55 A(ring) of hydrogen-rich a-Si:H deposits. Finally, μc-Si:H nucleates on top of this ∼100 A(ring) thick, high H-content a-Si:H interface layer. As μc-Si:H grows, the thickness of the amorphous interface layer decreases by ∼40 A(ring); the void fraction in the μc-Si:H layer is always ≤15 vol %, ruling out the possibility that the a-Si:H is etched away. These results suggest that a-Si:H can be transformed into μc-Si:H in a subsurface region under appropriate conditions. © 1994 American Institue of Physics. 1077-3118 10773118 American Institute of Physics (AIP) |
| shingle_title_1 | Subsurface hydrogenated amorphous silicon to μc-hydrogenated silicon transformation during magnetron sputter deposition determined by spectroscopic ellipsometry |
| shingle_title_2 | Subsurface hydrogenated amorphous silicon to μc-hydrogenated silicon transformation during magnetron sputter deposition determined by spectroscopic ellipsometry |
| shingle_title_3 | Subsurface hydrogenated amorphous silicon to μc-hydrogenated silicon transformation during magnetron sputter deposition determined by spectroscopic ellipsometry |
| shingle_title_4 | Subsurface hydrogenated amorphous silicon to μc-hydrogenated silicon transformation during magnetron sputter deposition determined by spectroscopic ellipsometry |
| sigel_instance_filter | dkfz geomar wilbert ipn albert |
| source_archive | AIP Digital Archive |
| timestamp | 2024-05-06T08:03:44.488Z |
| titel | Subsurface hydrogenated amorphous silicon to μc-hydrogenated silicon transformation during magnetron sputter deposition determined by spectroscopic ellipsometry |
| titel_suche | Subsurface hydrogenated amorphous silicon to μc-hydrogenated silicon transformation during magnetron sputter deposition determined by spectroscopic ellipsometry |
| topic | U |
| uid | nat_lic_papers_NLZ218198213 |