Subsurface hydrogenated amorphous silicon to μc-hydrogenated silicon transformation during magnetron sputter deposition determined by spectroscopic ellipsometry
Yang, Y. H. ; Katiyar, M. ; Feng, G. F. ; Maley, N. ; Abelson, J. R.
Woodbury, NY : American Institute of Physics (AIP)
Published 1994
Woodbury, NY : American Institute of Physics (AIP)
Published 1994
| ISSN: |
1077-3118
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| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
We use in situ spectroscopic ellipsometry to analyze the microstructure of the μc-Si:H/a-Si:H interface deposited by reactive magnetron sputtering of a Si target in (Ar+H2). We increase the hydrogen pressure to promote μc-Si:H formation and observe several effects. Initially, H penetrates ∼45 A(ring) into the a-Si:H substrate and increases its hydrogen content. Then ∼55 A(ring) of hydrogen-rich a-Si:H deposits. Finally, μc-Si:H nucleates on top of this ∼100 A(ring) thick, high H-content a-Si:H interface layer. As μc-Si:H grows, the thickness of the amorphous interface layer decreases by ∼40 A(ring); the void fraction in the μc-Si:H layer is always ≤15 vol %, ruling out the possibility that the a-Si:H is etched away. These results suggest that a-Si:H can be transformed into μc-Si:H in a subsurface region under appropriate conditions. © 1994 American Institue of Physics.
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| Type of Medium: |
Electronic Resource
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| URL: |