Dependence of substitutional C incorporation on Ge content for Si1−x−yGexCy crystals grown by ultrahigh vacuum chemical vapor deposition
Kanzawa, Y. ; Nozawa, K. ; Saitoh, T. ; Kubo, M.
Woodbury, NY : American Institute of Physics (AIP)
Published 2000
Woodbury, NY : American Institute of Physics (AIP)
Published 2000
| ISSN: |
1077-3118
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|---|---|
| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
Si1−x−yGexCy crystals were grown by ultrahigh vacuum chemical vapor deposition (UHV-CVD) using Si2H6, GeH4, and SiH3CH3 as source gases. Although the total C content in the grown crystals increased with increasing the partial pressure of SiH3CH3 gas, the substitutional C content saturated at a certain value. The maximum substitutional C content was found to change depending on the Ge content. As the Ge content was increased from 13 to 35 at. %, the maximum substitutional C content linearly decreased from 2.0 to 0.8 at. %. These results clearly demonstrate that the existence of Ge atoms prevents the substitutional incorporation of C atoms in Si1−x−yGexCy growth by CVD. © 2000 American Institute of Physics.
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| Type of Medium: |
Electronic Resource
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| URL: |