Kanzawa, Y., Nozawa, K., Saitoh, T., & Kubo, M. (2000). Dependence of substitutional C incorporation on Ge content for Si1−x−yGexCy crystals grown by ultrahigh vacuum chemical vapor deposition. American Institute of Physics (AIP).
Chicago Style (17th ed.) CitationKanzawa, Y., K. Nozawa, T. Saitoh, and M. Kubo. Dependence of Substitutional C Incorporation on Ge Content for Si1−x−yGexCy Crystals Grown by Ultrahigh Vacuum Chemical Vapor Deposition. Woodbury, NY: American Institute of Physics (AIP), 2000.
MLA (9th ed.) CitationKanzawa, Y., et al. Dependence of Substitutional C Incorporation on Ge Content for Si1−x−yGexCy Crystals Grown by Ultrahigh Vacuum Chemical Vapor Deposition. American Institute of Physics (AIP), 2000.
Warning: These citations may not always be 100% accurate.