APA (7th ed.) Citation

Kanzawa, Y., Nozawa, K., Saitoh, T., & Kubo, M. (2000). Dependence of substitutional C incorporation on Ge content for Si1−x−yGexCy crystals grown by ultrahigh vacuum chemical vapor deposition. American Institute of Physics (AIP).

Chicago Style (17th ed.) Citation

Kanzawa, Y., K. Nozawa, T. Saitoh, and M. Kubo. Dependence of Substitutional C Incorporation on Ge Content for Si1−x−yGexCy Crystals Grown by Ultrahigh Vacuum Chemical Vapor Deposition. Woodbury, NY: American Institute of Physics (AIP), 2000.

MLA (9th ed.) Citation

Kanzawa, Y., et al. Dependence of Substitutional C Incorporation on Ge Content for Si1−x−yGexCy Crystals Grown by Ultrahigh Vacuum Chemical Vapor Deposition. American Institute of Physics (AIP), 2000.