Dependence of substitutional C incorporation on Ge content for Si1−x−yGexCy crystals grown by ultrahigh vacuum chemical vapor deposition - Kanzawa, Y.; Nozawa, K.; Saitoh, T.; Kubo, M. (American Institute of Physics (AIP), 2000)
http://dx.doi.org/10.1063/1.1332111
Keywords: U