Optimized growth start and controlled formation of misfit dislocations for heteroepitaxial GaAs on (100) Si grown by migration-enhanced epitaxy
| ISSN: |
0022-0248
|
|---|---|
| Source: |
Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
|
| Topics: |
Chemistry and Pharmacology
Geosciences
Physics
|
| Type of Medium: |
Electronic Resource
|
| URL: |
| _version_ | 1798290948321443841 |
|---|---|
| autor | Stolz, W. Horikoshi, Y. Naganuma, M. Nozawa, K. |
| autorsonst | Stolz, W. Horikoshi, Y. Naganuma, M. Nozawa, K. |
| book_url | http://linkinghub.elsevier.com/retrieve/pii/0022-0248(89)90357-6 |
| datenlieferant | nat_lic_papers |
| fussnote | The low-temperature growth start under Ga-dominated conditions using MEE instead of standard MBE leads to a significant improvement of the GaAs epitaxial layer quality on (100) Si. Based on these results a model for a charge-neutral GaAs/Si interface is developed. The energetic barrier for the generation of misfit dislocations on the epitaxial layer surface can be used to controle the dislocation formation at low growth temperature. A dependence of the strain relaxation on the substrate off-orientation is found. These different steps result in a reduction of the defect density near the GaAs/Si interface, an atomically flat growth surface, an improved (AlGa)As/GaAs heterointerface quality and an increase in luminescence intensity. |
| hauptsatz | hsatz_simple |
| identnr | NLZ177537396 |
| issn | 0022-0248 |
| journal_name | Journal of Crystal Growth |
| materialart | 1 |
| package_name | Elsevier |
| publikationsort | Amsterdam |
| publisher | Elsevier |
| reference | 95 (1989), S. 87-90 |
| search_space | articles |
| shingle_author_1 | Stolz, W. Horikoshi, Y. Naganuma, M. Nozawa, K. |
| shingle_author_2 | Stolz, W. Horikoshi, Y. Naganuma, M. Nozawa, K. |
| shingle_author_3 | Stolz, W. Horikoshi, Y. Naganuma, M. Nozawa, K. |
| shingle_author_4 | Stolz, W. Horikoshi, Y. Naganuma, M. Nozawa, K. |
| shingle_catch_all_1 | Stolz, W. Horikoshi, Y. Naganuma, M. Nozawa, K. Optimized growth start and controlled formation of misfit dislocations for heteroepitaxial GaAs on (100) Si grown by migration-enhanced epitaxy 0022-0248 00220248 Elsevier |
| shingle_catch_all_2 | Stolz, W. Horikoshi, Y. Naganuma, M. Nozawa, K. Optimized growth start and controlled formation of misfit dislocations for heteroepitaxial GaAs on (100) Si grown by migration-enhanced epitaxy 0022-0248 00220248 Elsevier |
| shingle_catch_all_3 | Stolz, W. Horikoshi, Y. Naganuma, M. Nozawa, K. Optimized growth start and controlled formation of misfit dislocations for heteroepitaxial GaAs on (100) Si grown by migration-enhanced epitaxy 0022-0248 00220248 Elsevier |
| shingle_catch_all_4 | Stolz, W. Horikoshi, Y. Naganuma, M. Nozawa, K. Optimized growth start and controlled formation of misfit dislocations for heteroepitaxial GaAs on (100) Si grown by migration-enhanced epitaxy 0022-0248 00220248 Elsevier |
| shingle_title_1 | Optimized growth start and controlled formation of misfit dislocations for heteroepitaxial GaAs on (100) Si grown by migration-enhanced epitaxy |
| shingle_title_2 | Optimized growth start and controlled formation of misfit dislocations for heteroepitaxial GaAs on (100) Si grown by migration-enhanced epitaxy |
| shingle_title_3 | Optimized growth start and controlled formation of misfit dislocations for heteroepitaxial GaAs on (100) Si grown by migration-enhanced epitaxy |
| shingle_title_4 | Optimized growth start and controlled formation of misfit dislocations for heteroepitaxial GaAs on (100) Si grown by migration-enhanced epitaxy |
| sigel_instance_filter | dkfz geomar wilbert ipn albert fhp |
| source_archive | Elsevier Journal Backfiles on ScienceDirect 1907 - 2002 |
| timestamp | 2024-05-06T08:24:50.472Z |
| titel | Optimized growth start and controlled formation of misfit dislocations for heteroepitaxial GaAs on (100) Si grown by migration-enhanced epitaxy |
| titel_suche | Optimized growth start and controlled formation of misfit dislocations for heteroepitaxial GaAs on (100) Si grown by migration-enhanced epitaxy The low-temperature growth start under Ga-dominated conditions using MEE instead of standard MBE leads to a significant improvement of the GaAs epitaxial layer quality on (100) Si. Based on these results a model for a charge-neutral GaAs/Si interface is developed. The energetic barrier for the generation of misfit dislocations on the epitaxial layer surface can be used to controle the dislocation formation at low growth temperature. A dependence of the strain relaxation on the substrate off-orientation is found. These different steps result in a reduction of the defect density near the GaAs/Si interface, an atomically flat growth surface, an improved (AlGa)As/GaAs heterointerface quality and an increase in luminescence intensity. |
| topic | V TE-TZ U |
| uid | nat_lic_papers_NLZ177537396 |