Optimized growth start and controlled formation of misfit dislocations for heteroepitaxial GaAs on (100) Si grown by migration-enhanced epitaxy - Stolz, W.; Horikoshi, Y.; Naganuma, M.; Nozawa, K. (Elsevier)
The low-temperature growth start under Ga-dominated conditions using MEE instead of standard MBE leads to a significant improvement of the GaAs epitaxial layer quality on (100) Si. Based on these results a model for a charge-neutral GaAs/Si interface is developed. The energetic barrier for the generation of misfit dislocations on the epitaxial layer surface can be used to controle the dislocation formation at low growth temperature. A dependence of the strain relaxation on the substrate off-orientation is found. These different steps result in a reduction of the defect density near the GaAs/Si interface, an atomically flat growth surface, an improved (AlGa)As/GaAs heterointerface quality and an increase in luminescence intensity.
http://linkinghub.elsevier.com/retrieve/pii/0022-0248(89)90357-6
Keywords: V; TE-TZ; U