Optimized growth start and controlled formation of misfit dislocations for heteroepitaxial GaAs on (100) Si grown by migration-enhanced epitaxy

Stolz, W. ; Horikoshi, Y. ; Naganuma, M. ; Nozawa, K.

Amsterdam : Elsevier

ISSN:	0022-0248
Source:	Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
Topics:	Chemistry and Pharmacology Geosciences Physics
Type of Medium:	Electronic Resource
URL:	http://linkinghub.elsevier.com/retrieve/pii/0022-0248(89)90357-6