AES and factor analysis study of silicide growth at the Pd/c-Si interface
| ISSN: |
0169-4332
|
|---|---|
| Source: |
Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
|
| Topics: |
Physics
|
| Type of Medium: |
Electronic Resource
|
| URL: |
| _version_ | 1798291698408751105 |
|---|---|
| autor | Steren, L. Vidal, R. Ferron, J. |
| autorsonst | Steren, L. Vidal, R. Ferron, J. |
| book_url | http://linkinghub.elsevier.com/retrieve/pii/0169-4332(87)90047-X |
| datenlieferant | nat_lic_papers |
| fussnote | We have measured the evolution of a palladium/silicon interface under consecutive annealing periods, performed at 200^oC in UHV conditions. The interface was analyzed by means of Auger electron spectroscopy combined with factor analysis applied in a sequential way. We found that silicide appears only after annealing and evolves until all the palladium is consumed. A silicon compound different from silicide, identified as Pd"xSi with x〈2 is found at the interface Pd/Si and Pd"2Si/Si, before and after annealing respectively. |
| hauptsatz | hsatz_simple |
| identnr | NLZ177335866 |
| iqvoc_descriptor_title | iqvoc_00000708:analysis |
| issn | 0169-4332 |
| journal_name | Applied Surface Science |
| materialart | 1 |
| package_name | Elsevier |
| publikationsort | Amsterdam |
| publisher | Elsevier |
| reference | 29 (1987), S. 418-426 |
| search_space | articles |
| shingle_author_1 | Steren, L. Vidal, R. Ferron, J. |
| shingle_author_2 | Steren, L. Vidal, R. Ferron, J. |
| shingle_author_3 | Steren, L. Vidal, R. Ferron, J. |
| shingle_author_4 | Steren, L. Vidal, R. Ferron, J. |
| shingle_catch_all_1 | Steren, L. Vidal, R. Ferron, J. AES and factor analysis study of silicide growth at the Pd/c-Si interface 0169-4332 01694332 Elsevier |
| shingle_catch_all_2 | Steren, L. Vidal, R. Ferron, J. AES and factor analysis study of silicide growth at the Pd/c-Si interface 0169-4332 01694332 Elsevier |
| shingle_catch_all_3 | Steren, L. Vidal, R. Ferron, J. AES and factor analysis study of silicide growth at the Pd/c-Si interface 0169-4332 01694332 Elsevier |
| shingle_catch_all_4 | Steren, L. Vidal, R. Ferron, J. AES and factor analysis study of silicide growth at the Pd/c-Si interface 0169-4332 01694332 Elsevier |
| shingle_title_1 | AES and factor analysis study of silicide growth at the Pd/c-Si interface |
| shingle_title_2 | AES and factor analysis study of silicide growth at the Pd/c-Si interface |
| shingle_title_3 | AES and factor analysis study of silicide growth at the Pd/c-Si interface |
| shingle_title_4 | AES and factor analysis study of silicide growth at the Pd/c-Si interface |
| sigel_instance_filter | dkfz geomar wilbert ipn albert fhp |
| source_archive | Elsevier Journal Backfiles on ScienceDirect 1907 - 2002 |
| timestamp | 2024-05-06T08:36:45.244Z |
| titel | AES and factor analysis study of silicide growth at the Pd/c-Si interface |
| titel_suche | AES and factor analysis study of silicide growth at the Pd/c-Si interface We have measured the evolution of a palladium/silicon interface under consecutive annealing periods, performed at 200^oC in UHV conditions. The interface was analyzed by means of Auger electron spectroscopy combined with factor analysis applied in a sequential way. We found that silicide appears only after annealing and evolves until all the palladium is consumed. A silicon compound different from silicide, identified as Pd"xSi with x〈2 is found at the interface Pd/Si and Pd"2Si/Si, before and after annealing respectively. |
| topic | U |
| uid | nat_lic_papers_NLZ177335866 |