AES and factor analysis study of silicide growth at the Pd/c-Si interface - Steren, L.; Vidal, R.; Ferron, J. (Elsevier)
We have measured the evolution of a palladium/silicon interface under consecutive annealing periods, performed at 200^oC in UHV conditions. The interface was analyzed by means of Auger electron spectroscopy combined with factor analysis applied in a sequential way. We found that silicide appears only after annealing and evolves until all the palladium is consumed. A silicon compound different from silicide, identified as Pd"xSi with x〈2 is found at the interface Pd/Si and Pd"2Si/Si, before and after annealing respectively.
http://linkinghub.elsevier.com/retrieve/pii/0169-4332(87)90047-X
Keywords: U