Determination of interface state density of PtSi/strained-Si1-xGex/Si Schottky diodes
Chattopadhyay, S. ; Bera, L. K. ; Maiti, C. K. ; Ray, S. K. ; Bose, P. K. ; Dentel, D. ; Kubler, L. ; Bischoff, J. L.
Springer
Published 1998
Springer
Published 1998
| ISSN: |
1573-482X
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| Source: |
Springer Online Journal Archives 1860-2000
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| Topics: |
Electrical Engineering, Measurement and Control Technology
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
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| Notes: |
Abstract PtSi/p-strained-Si1-xGex (x=0.19 and x=0.29) Schottky barrier diodes have been fabricated and characterized for the determination of barrier height, ideality factor and the interface state density distribution with energy. Diodes having an epitaxial layer thickness of 20 and 52 nm were modeled with emphasis on comparison with experiment. To achieve better agreement with experimental data, an interfacial layer and associated series resistance were included in the model. The capacitance–voltage (C–V) technique has been used for the determination of the energy distribution of interface state density. The interface state density distribution for the Si0.81Ge0.19 and Si0.71Ge0.29 diodes is found to decrease with increasing energy from the valence band edge.
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| Type of Medium: |
Electronic Resource
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| URL: |