Electromagnetic particle-in-cell simulations of Applied-B proton diodes
Slutz, S. A. ; Seidel, D. B. ; Coats, R. S.
[S.l.] : American Institute of Physics (AIP)
Published 1986
[S.l.] : American Institute of Physics (AIP)
Published 1986
| ISSN: |
1089-7550
|
|---|---|
| Source: |
AIP Digital Archive
|
| Topics: |
Physics
|
| Notes: |
Fully electromagnetic particle-in-cell simulations of Applied-B ion diodes have been performed using the magic code. These calculations indicate that Applied-B diodes can be nearly 100% efficient. Furthermore, the simulations exhibit an impedance relaxation phenomenon due to the buildup of electron space charge near the anode which causes a time-dependent enhancement of the ion emission above the Child–Langmuir value. This phenomenon may at least partially explain the rapidly decreasing impedance that has been observed in Applied-B ion diode experiments. The results of our numerical simulations will be compared to experimental data on Applied-B ion diodes and to analytic theories of their operation.
|
| Type of Medium: |
Electronic Resource
|
| URL: |
| _version_ | 1798289678134149122 |
|---|---|
| autor | Slutz, S. A. Seidel, D. B. Coats, R. S. |
| autorsonst | Slutz, S. A. Seidel, D. B. Coats, R. S. |
| book_url | http://dx.doi.org/10.1063/1.336851 |
| datenlieferant | nat_lic_papers |
| hauptsatz | hsatz_simple |
| identnr | NLZ218767382 |
| iqvoc_descriptor_title | iqvoc_00000633:diodes |
| issn | 1089-7550 |
| journal_name | Journal of Applied Physics |
| materialart | 1 |
| notes | Fully electromagnetic particle-in-cell simulations of Applied-B ion diodes have been performed using the magic code. These calculations indicate that Applied-B diodes can be nearly 100% efficient. Furthermore, the simulations exhibit an impedance relaxation phenomenon due to the buildup of electron space charge near the anode which causes a time-dependent enhancement of the ion emission above the Child–Langmuir value. This phenomenon may at least partially explain the rapidly decreasing impedance that has been observed in Applied-B ion diode experiments. The results of our numerical simulations will be compared to experimental data on Applied-B ion diodes and to analytic theories of their operation. |
| package_name | American Institute of Physics (AIP) |
| publikationsjahr_anzeige | 1986 |
| publikationsjahr_facette | 1986 |
| publikationsjahr_intervall | 8014:1985-1989 |
| publikationsjahr_sort | 1986 |
| publikationsort | [S.l.] |
| publisher | American Institute of Physics (AIP) |
| reference | 59 (1986), S. 11-18 |
| search_space | articles |
| shingle_author_1 | Slutz, S. A. Seidel, D. B. Coats, R. S. |
| shingle_author_2 | Slutz, S. A. Seidel, D. B. Coats, R. S. |
| shingle_author_3 | Slutz, S. A. Seidel, D. B. Coats, R. S. |
| shingle_author_4 | Slutz, S. A. Seidel, D. B. Coats, R. S. |
| shingle_catch_all_1 | Slutz, S. A. Seidel, D. B. Coats, R. S. Electromagnetic particle-in-cell simulations of Applied-B proton diodes Fully electromagnetic particle-in-cell simulations of Applied-B ion diodes have been performed using the magic code. These calculations indicate that Applied-B diodes can be nearly 100% efficient. Furthermore, the simulations exhibit an impedance relaxation phenomenon due to the buildup of electron space charge near the anode which causes a time-dependent enhancement of the ion emission above the Child–Langmuir value. This phenomenon may at least partially explain the rapidly decreasing impedance that has been observed in Applied-B ion diode experiments. The results of our numerical simulations will be compared to experimental data on Applied-B ion diodes and to analytic theories of their operation. 1089-7550 10897550 American Institute of Physics (AIP) |
| shingle_catch_all_2 | Slutz, S. A. Seidel, D. B. Coats, R. S. Electromagnetic particle-in-cell simulations of Applied-B proton diodes Fully electromagnetic particle-in-cell simulations of Applied-B ion diodes have been performed using the magic code. These calculations indicate that Applied-B diodes can be nearly 100% efficient. Furthermore, the simulations exhibit an impedance relaxation phenomenon due to the buildup of electron space charge near the anode which causes a time-dependent enhancement of the ion emission above the Child–Langmuir value. This phenomenon may at least partially explain the rapidly decreasing impedance that has been observed in Applied-B ion diode experiments. The results of our numerical simulations will be compared to experimental data on Applied-B ion diodes and to analytic theories of their operation. 1089-7550 10897550 American Institute of Physics (AIP) |
| shingle_catch_all_3 | Slutz, S. A. Seidel, D. B. Coats, R. S. Electromagnetic particle-in-cell simulations of Applied-B proton diodes Fully electromagnetic particle-in-cell simulations of Applied-B ion diodes have been performed using the magic code. These calculations indicate that Applied-B diodes can be nearly 100% efficient. Furthermore, the simulations exhibit an impedance relaxation phenomenon due to the buildup of electron space charge near the anode which causes a time-dependent enhancement of the ion emission above the Child–Langmuir value. This phenomenon may at least partially explain the rapidly decreasing impedance that has been observed in Applied-B ion diode experiments. The results of our numerical simulations will be compared to experimental data on Applied-B ion diodes and to analytic theories of their operation. 1089-7550 10897550 American Institute of Physics (AIP) |
| shingle_catch_all_4 | Slutz, S. A. Seidel, D. B. Coats, R. S. Electromagnetic particle-in-cell simulations of Applied-B proton diodes Fully electromagnetic particle-in-cell simulations of Applied-B ion diodes have been performed using the magic code. These calculations indicate that Applied-B diodes can be nearly 100% efficient. Furthermore, the simulations exhibit an impedance relaxation phenomenon due to the buildup of electron space charge near the anode which causes a time-dependent enhancement of the ion emission above the Child–Langmuir value. This phenomenon may at least partially explain the rapidly decreasing impedance that has been observed in Applied-B ion diode experiments. The results of our numerical simulations will be compared to experimental data on Applied-B ion diodes and to analytic theories of their operation. 1089-7550 10897550 American Institute of Physics (AIP) |
| shingle_title_1 | Electromagnetic particle-in-cell simulations of Applied-B proton diodes |
| shingle_title_2 | Electromagnetic particle-in-cell simulations of Applied-B proton diodes |
| shingle_title_3 | Electromagnetic particle-in-cell simulations of Applied-B proton diodes |
| shingle_title_4 | Electromagnetic particle-in-cell simulations of Applied-B proton diodes |
| sigel_instance_filter | dkfz geomar wilbert ipn albert |
| source_archive | AIP Digital Archive |
| timestamp | 2024-05-06T08:04:39.079Z |
| titel | Electromagnetic particle-in-cell simulations of Applied-B proton diodes |
| titel_suche | Electromagnetic particle-in-cell simulations of Applied-B proton diodes |
| topic | U |
| uid | nat_lic_papers_NLZ218767382 |