Electromagnetic particle-in-cell simulations of Applied-B proton diodes

Slutz, S. A. ; Seidel, D. B. ; Coats, R. S.

[S.l.] : American Institute of Physics (AIP)
Published 1986
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Fully electromagnetic particle-in-cell simulations of Applied-B ion diodes have been performed using the magic code. These calculations indicate that Applied-B diodes can be nearly 100% efficient. Furthermore, the simulations exhibit an impedance relaxation phenomenon due to the buildup of electron space charge near the anode which causes a time-dependent enhancement of the ion emission above the Child–Langmuir value. This phenomenon may at least partially explain the rapidly decreasing impedance that has been observed in Applied-B ion diode experiments. The results of our numerical simulations will be compared to experimental data on Applied-B ion diodes and to analytic theories of their operation.
Type of Medium:
Electronic Resource
URL: