Excimer and dye laser annealing of silicon-nitride-capped, Si-implanted GaAs
Compaan, A. ; Abbi, S. C. ; Yao, H. D. ; Bhat, A. ; Langer, D. W.
[S.l.] : American Institute of Physics (AIP)
Published 1987
[S.l.] : American Institute of Physics (AIP)
Published 1987
| ISSN: |
1089-7550
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|---|---|
| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
Carrier concentrations exceeding 1019/cm3 in GaAs implanted with Si (2×1014/cm2 at 140 keV) have been obtained by pulsed laser annealing with either a dye laser (λ=728 nm) or a XeCl excimer laser (λ=308 nm). Dye-laser annealing through a ∼55-nm-thick Si3N4 cap consistently produced higher activations than excimer-laser annealing with or without the cap. Carrier densities were measured by phonon-Raman and plasmon-Raman scattering.
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| Type of Medium: |
Electronic Resource
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| URL: |