Compaan, A., Abbi, S. C., Yao, H. D., Bhat, A., & Langer, D. W. (1987). Excimer and dye laser annealing of silicon-nitride-capped, Si-implanted GaAs. American Institute of Physics (AIP).
Chicago Style (17th ed.) CitationCompaan, A., S. C. Abbi, H. D. Yao, A. Bhat, and D. W. Langer. Excimer and Dye Laser Annealing of Silicon-nitride-capped, Si-implanted GaAs. [S.l.]: American Institute of Physics (AIP), 1987.
MLA (9th ed.) CitationCompaan, A., et al. Excimer and Dye Laser Annealing of Silicon-nitride-capped, Si-implanted GaAs. American Institute of Physics (AIP), 1987.
Warning: These citations may not always be 100% accurate.