A defect relaxation model for bias instabilities in metal-oxide-semiconductor capacitors
Zvanut, M. E. ; Feigl, F. J. ; Zook, J. D.
[S.l.] : American Institute of Physics (AIP)
Published 1988
[S.l.] : American Institute of Physics (AIP)
Published 1988
| ISSN: |
1089-7550
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|---|---|
| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
We have studied electron trapping and detrapping resulting from bias stress applied to a metal-sputtered oxide-native oxide-semiconductor capacitor. The trapping process is described as band-to-trap tunneling. Based on the assumption of a trap with a delta function spatial distribution, a model was developed that predicts a trap energy distribution and defect relaxation energy. Application of this model to experimental data reveals a value for the relaxation energy of approximately 1 eV. We suggest that this model may apply to hysteretic instabilities observed in p-channel transistors and dual dielectric memory devices.
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| Type of Medium: |
Electronic Resource
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| URL: |