Room-temperature continuous operation of GaAs/AlGaAs lasers grown on Si by organometallic vapor-phase epitaxy
Choi, H. K. ; Wang, C. A. ; Fan, John C. C.
[S.l.] : American Institute of Physics (AIP)
Published 1990
[S.l.] : American Institute of Physics (AIP)
Published 1990
| ISSN: |
1089-7550
|
|---|---|
| Source: |
AIP Digital Archive
|
| Topics: |
Physics
|
| Notes: |
Graded-index separate-confinement heterostructure single-quantum-well GaAs/AlGaAs diode lasers exhibiting continuous (cw) operation at room temperature have been grown on a Si substrate by organometallic vapor-phase epitaxy, without the use of molecular-beam epitaxy. To improve the quality of the laser structure, a defect-filtering layer was incorporated between this structure and a GaAs buffer layer about 1.5 μm thick grown on the substrate. Of four types of defect-filtering layers investigated, the most effective was one grown with thermal cycling, which made it possible to obtain pulsed threshold current densities as low as 350 A/cm2 for broad-stripe lasers with a cavity length of 500 μm. Ridge-waveguide lasers with this type of defect-filtering layer have exhibited cw threshold currents as low as 25 mA and a differential quantum efficiency of 55%.
|
| Type of Medium: |
Electronic Resource
|
| URL: |
| _version_ | 1798289665722155009 |
|---|---|
| autor | Choi, H. K. Wang, C. A. Fan, John C. C. |
| autorsonst | Choi, H. K. Wang, C. A. Fan, John C. C. |
| book_url | http://dx.doi.org/10.1063/1.346583 |
| datenlieferant | nat_lic_papers |
| hauptsatz | hsatz_simple |
| identnr | NLZ218664729 |
| issn | 1089-7550 |
| journal_name | Journal of Applied Physics |
| materialart | 1 |
| notes | Graded-index separate-confinement heterostructure single-quantum-well GaAs/AlGaAs diode lasers exhibiting continuous (cw) operation at room temperature have been grown on a Si substrate by organometallic vapor-phase epitaxy, without the use of molecular-beam epitaxy. To improve the quality of the laser structure, a defect-filtering layer was incorporated between this structure and a GaAs buffer layer about 1.5 μm thick grown on the substrate. Of four types of defect-filtering layers investigated, the most effective was one grown with thermal cycling, which made it possible to obtain pulsed threshold current densities as low as 350 A/cm2 for broad-stripe lasers with a cavity length of 500 μm. Ridge-waveguide lasers with this type of defect-filtering layer have exhibited cw threshold currents as low as 25 mA and a differential quantum efficiency of 55%. |
| package_name | American Institute of Physics (AIP) |
| publikationsjahr_anzeige | 1990 |
| publikationsjahr_facette | 1990 |
| publikationsjahr_intervall | 8009:1990-1994 |
| publikationsjahr_sort | 1990 |
| publikationsort | [S.l.] |
| publisher | American Institute of Physics (AIP) |
| reference | 68 (1990), S. 1916-1918 |
| search_space | articles |
| shingle_author_1 | Choi, H. K. Wang, C. A. Fan, John C. C. |
| shingle_author_2 | Choi, H. K. Wang, C. A. Fan, John C. C. |
| shingle_author_3 | Choi, H. K. Wang, C. A. Fan, John C. C. |
| shingle_author_4 | Choi, H. K. Wang, C. A. Fan, John C. C. |
| shingle_catch_all_1 | Choi, H. K. Wang, C. A. Fan, John C. C. Room-temperature continuous operation of GaAs/AlGaAs lasers grown on Si by organometallic vapor-phase epitaxy Graded-index separate-confinement heterostructure single-quantum-well GaAs/AlGaAs diode lasers exhibiting continuous (cw) operation at room temperature have been grown on a Si substrate by organometallic vapor-phase epitaxy, without the use of molecular-beam epitaxy. To improve the quality of the laser structure, a defect-filtering layer was incorporated between this structure and a GaAs buffer layer about 1.5 μm thick grown on the substrate. Of four types of defect-filtering layers investigated, the most effective was one grown with thermal cycling, which made it possible to obtain pulsed threshold current densities as low as 350 A/cm2 for broad-stripe lasers with a cavity length of 500 μm. Ridge-waveguide lasers with this type of defect-filtering layer have exhibited cw threshold currents as low as 25 mA and a differential quantum efficiency of 55%. 1089-7550 10897550 American Institute of Physics (AIP) |
| shingle_catch_all_2 | Choi, H. K. Wang, C. A. Fan, John C. C. Room-temperature continuous operation of GaAs/AlGaAs lasers grown on Si by organometallic vapor-phase epitaxy Graded-index separate-confinement heterostructure single-quantum-well GaAs/AlGaAs diode lasers exhibiting continuous (cw) operation at room temperature have been grown on a Si substrate by organometallic vapor-phase epitaxy, without the use of molecular-beam epitaxy. To improve the quality of the laser structure, a defect-filtering layer was incorporated between this structure and a GaAs buffer layer about 1.5 μm thick grown on the substrate. Of four types of defect-filtering layers investigated, the most effective was one grown with thermal cycling, which made it possible to obtain pulsed threshold current densities as low as 350 A/cm2 for broad-stripe lasers with a cavity length of 500 μm. Ridge-waveguide lasers with this type of defect-filtering layer have exhibited cw threshold currents as low as 25 mA and a differential quantum efficiency of 55%. 1089-7550 10897550 American Institute of Physics (AIP) |
| shingle_catch_all_3 | Choi, H. K. Wang, C. A. Fan, John C. C. Room-temperature continuous operation of GaAs/AlGaAs lasers grown on Si by organometallic vapor-phase epitaxy Graded-index separate-confinement heterostructure single-quantum-well GaAs/AlGaAs diode lasers exhibiting continuous (cw) operation at room temperature have been grown on a Si substrate by organometallic vapor-phase epitaxy, without the use of molecular-beam epitaxy. To improve the quality of the laser structure, a defect-filtering layer was incorporated between this structure and a GaAs buffer layer about 1.5 μm thick grown on the substrate. Of four types of defect-filtering layers investigated, the most effective was one grown with thermal cycling, which made it possible to obtain pulsed threshold current densities as low as 350 A/cm2 for broad-stripe lasers with a cavity length of 500 μm. Ridge-waveguide lasers with this type of defect-filtering layer have exhibited cw threshold currents as low as 25 mA and a differential quantum efficiency of 55%. 1089-7550 10897550 American Institute of Physics (AIP) |
| shingle_catch_all_4 | Choi, H. K. Wang, C. A. Fan, John C. C. Room-temperature continuous operation of GaAs/AlGaAs lasers grown on Si by organometallic vapor-phase epitaxy Graded-index separate-confinement heterostructure single-quantum-well GaAs/AlGaAs diode lasers exhibiting continuous (cw) operation at room temperature have been grown on a Si substrate by organometallic vapor-phase epitaxy, without the use of molecular-beam epitaxy. To improve the quality of the laser structure, a defect-filtering layer was incorporated between this structure and a GaAs buffer layer about 1.5 μm thick grown on the substrate. Of four types of defect-filtering layers investigated, the most effective was one grown with thermal cycling, which made it possible to obtain pulsed threshold current densities as low as 350 A/cm2 for broad-stripe lasers with a cavity length of 500 μm. Ridge-waveguide lasers with this type of defect-filtering layer have exhibited cw threshold currents as low as 25 mA and a differential quantum efficiency of 55%. 1089-7550 10897550 American Institute of Physics (AIP) |
| shingle_title_1 | Room-temperature continuous operation of GaAs/AlGaAs lasers grown on Si by organometallic vapor-phase epitaxy |
| shingle_title_2 | Room-temperature continuous operation of GaAs/AlGaAs lasers grown on Si by organometallic vapor-phase epitaxy |
| shingle_title_3 | Room-temperature continuous operation of GaAs/AlGaAs lasers grown on Si by organometallic vapor-phase epitaxy |
| shingle_title_4 | Room-temperature continuous operation of GaAs/AlGaAs lasers grown on Si by organometallic vapor-phase epitaxy |
| sigel_instance_filter | dkfz geomar wilbert ipn albert |
| source_archive | AIP Digital Archive |
| timestamp | 2024-05-06T08:04:27.120Z |
| titel | Room-temperature continuous operation of GaAs/AlGaAs lasers grown on Si by organometallic vapor-phase epitaxy |
| titel_suche | Room-temperature continuous operation of GaAs/AlGaAs lasers grown on Si by organometallic vapor-phase epitaxy |
| topic | U |
| uid | nat_lic_papers_NLZ218664729 |