Room-temperature continuous operation of GaAs/AlGaAs lasers grown on Si by organometallic vapor-phase epitaxy
Choi, H. K. ; Wang, C. A. ; Fan, John C. C.
[S.l.] : American Institute of Physics (AIP)
Published 1990
[S.l.] : American Institute of Physics (AIP)
Published 1990
| ISSN: |
1089-7550
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|---|---|
| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
Graded-index separate-confinement heterostructure single-quantum-well GaAs/AlGaAs diode lasers exhibiting continuous (cw) operation at room temperature have been grown on a Si substrate by organometallic vapor-phase epitaxy, without the use of molecular-beam epitaxy. To improve the quality of the laser structure, a defect-filtering layer was incorporated between this structure and a GaAs buffer layer about 1.5 μm thick grown on the substrate. Of four types of defect-filtering layers investigated, the most effective was one grown with thermal cycling, which made it possible to obtain pulsed threshold current densities as low as 350 A/cm2 for broad-stripe lasers with a cavity length of 500 μm. Ridge-waveguide lasers with this type of defect-filtering layer have exhibited cw threshold currents as low as 25 mA and a differential quantum efficiency of 55%.
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| Type of Medium: |
Electronic Resource
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| URL: |