The effect of the chemical vapor deposition of tungsten on shallow n+p and p+n junctions using titanium-tungsten as a barrier
Eshraghi, S. A. ; Georgiou, G. E. ; Liu, R.
[S.l.] : American Institute of Physics (AIP)
Published 1990
[S.l.] : American Institute of Physics (AIP)
Published 1990
| ISSN: |
1089-7550
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|---|---|
| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
The effect of blanket chemical vapor deposition (CVD) of tungsten (SiH4 reduction) on shallow CoSi2 junctions using 450–1800 A(ring) of titanium-tungsten (TiW) as a diffusion barrier has been investigated. Thermal stability of W/TiW and Al/W/TiW is studied by measuring the reverse leakage current at 25 °C anneal intervals. The Al/TiW structure has been used as a reference. W/TiW junctions with ≤700 A(ring) of TiW are less stable than Al/TiW junctions. The addition of Al on top of CVD W enhances the junction degradation considerably. p+n junctions are more sensitive to the barrier failure. The effect of CVD W deposition temperature has been studied. Junctions exposed to 480 °C CVD W deposition temperature showed a lower leakage than those at 300 °C.
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| Type of Medium: |
Electronic Resource
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| URL: |