Transmission electron microscopy study of N+-implanted silicon on insulator by energy-filtered imaging
| ISSN: |
1089-7550
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| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
We report on the first study of N+-implanted silicon on insulator by energy-filtered imaging using an Opton electron microscope CEM 902 equipped Castaing–Henry electron optical system as a spectrometer. The inelastic images, energy window set at ΔE=16 eV and ΔE=25 eV according to plasmon energy loss of crystal Si and of silicon nitride respectively, give much structure information. The interface between the top silicon layer and the upper silicon nitride layer can be separated into two sublayers.
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| Type of Medium: |
Electronic Resource
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| URL: |
| _version_ | 1798289662368808963 |
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| autor | Duan, X. F. Du, A. Y. Chu, Y. M. |
| autorsonst | Duan, X. F. Du, A. Y. Chu, Y. M. |
| book_url | http://dx.doi.org/10.1063/1.349503 |
| datenlieferant | nat_lic_papers |
| hauptsatz | hsatz_simple |
| identnr | NLZ218633629 |
| issn | 1089-7550 |
| journal_name | Journal of Applied Physics |
| materialart | 1 |
| notes | We report on the first study of N+-implanted silicon on insulator by energy-filtered imaging using an Opton electron microscope CEM 902 equipped Castaing–Henry electron optical system as a spectrometer. The inelastic images, energy window set at ΔE=16 eV and ΔE=25 eV according to plasmon energy loss of crystal Si and of silicon nitride respectively, give much structure information. The interface between the top silicon layer and the upper silicon nitride layer can be separated into two sublayers. |
| package_name | American Institute of Physics (AIP) |
| publikationsjahr_anzeige | 1991 |
| publikationsjahr_facette | 1991 |
| publikationsjahr_intervall | 8009:1990-1994 |
| publikationsjahr_sort | 1991 |
| publikationsort | [S.l.] |
| publisher | American Institute of Physics (AIP) |
| reference | 70 (1991), S. 1850-1852 |
| search_space | articles |
| shingle_author_1 | Duan, X. F. Du, A. Y. Chu, Y. M. |
| shingle_author_2 | Duan, X. F. Du, A. Y. Chu, Y. M. |
| shingle_author_3 | Duan, X. F. Du, A. Y. Chu, Y. M. |
| shingle_author_4 | Duan, X. F. Du, A. Y. Chu, Y. M. |
| shingle_catch_all_1 | Duan, X. F. Du, A. Y. Chu, Y. M. Transmission electron microscopy study of N+-implanted silicon on insulator by energy-filtered imaging We report on the first study of N+-implanted silicon on insulator by energy-filtered imaging using an Opton electron microscope CEM 902 equipped Castaing–Henry electron optical system as a spectrometer. The inelastic images, energy window set at ΔE=16 eV and ΔE=25 eV according to plasmon energy loss of crystal Si and of silicon nitride respectively, give much structure information. The interface between the top silicon layer and the upper silicon nitride layer can be separated into two sublayers. 1089-7550 10897550 American Institute of Physics (AIP) |
| shingle_catch_all_2 | Duan, X. F. Du, A. Y. Chu, Y. M. Transmission electron microscopy study of N+-implanted silicon on insulator by energy-filtered imaging We report on the first study of N+-implanted silicon on insulator by energy-filtered imaging using an Opton electron microscope CEM 902 equipped Castaing–Henry electron optical system as a spectrometer. The inelastic images, energy window set at ΔE=16 eV and ΔE=25 eV according to plasmon energy loss of crystal Si and of silicon nitride respectively, give much structure information. The interface between the top silicon layer and the upper silicon nitride layer can be separated into two sublayers. 1089-7550 10897550 American Institute of Physics (AIP) |
| shingle_catch_all_3 | Duan, X. F. Du, A. Y. Chu, Y. M. Transmission electron microscopy study of N+-implanted silicon on insulator by energy-filtered imaging We report on the first study of N+-implanted silicon on insulator by energy-filtered imaging using an Opton electron microscope CEM 902 equipped Castaing–Henry electron optical system as a spectrometer. The inelastic images, energy window set at ΔE=16 eV and ΔE=25 eV according to plasmon energy loss of crystal Si and of silicon nitride respectively, give much structure information. The interface between the top silicon layer and the upper silicon nitride layer can be separated into two sublayers. 1089-7550 10897550 American Institute of Physics (AIP) |
| shingle_catch_all_4 | Duan, X. F. Du, A. Y. Chu, Y. M. Transmission electron microscopy study of N+-implanted silicon on insulator by energy-filtered imaging We report on the first study of N+-implanted silicon on insulator by energy-filtered imaging using an Opton electron microscope CEM 902 equipped Castaing–Henry electron optical system as a spectrometer. The inelastic images, energy window set at ΔE=16 eV and ΔE=25 eV according to plasmon energy loss of crystal Si and of silicon nitride respectively, give much structure information. The interface between the top silicon layer and the upper silicon nitride layer can be separated into two sublayers. 1089-7550 10897550 American Institute of Physics (AIP) |
| shingle_title_1 | Transmission electron microscopy study of N+-implanted silicon on insulator by energy-filtered imaging |
| shingle_title_2 | Transmission electron microscopy study of N+-implanted silicon on insulator by energy-filtered imaging |
| shingle_title_3 | Transmission electron microscopy study of N+-implanted silicon on insulator by energy-filtered imaging |
| shingle_title_4 | Transmission electron microscopy study of N+-implanted silicon on insulator by energy-filtered imaging |
| sigel_instance_filter | dkfz geomar wilbert ipn albert |
| source_archive | AIP Digital Archive |
| timestamp | 2024-05-06T08:04:24.317Z |
| titel | Transmission electron microscopy study of N+-implanted silicon on insulator by energy-filtered imaging |
| titel_suche | Transmission electron microscopy study of N+-implanted silicon on insulator by energy-filtered imaging |
| topic | U |
| uid | nat_lic_papers_NLZ218633629 |