Charge trapping on different cuts of a single-crystalline α-SiO2
Gong, H. ; Le Gressus, C. ; Oh, K. H. ; Ding, X. Z. ; Ong, C. K. ; Tan, B. T. G.
[S.l.] : American Institute of Physics (AIP)
Published 1993
[S.l.] : American Institute of Physics (AIP)
Published 1993
| ISSN: |
1089-7550
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| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
A scanning electron microscope is employed for the investigation of charging on different cuts of an α-SiO2. A method for the determination of trapped charges is proposed. Charging on different cuts is observed to decrease in the order of z cut, 30° cut, 45° cut, and 60° cut of the α-SiO2. This phenomenon is related to permittivity, defect density, and stress of the samples. Details of the experiments and the method of charge determination are given.
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| Type of Medium: |
Electronic Resource
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| URL: |