Electron-spin-resonance evidence for an impurity-related E'-like hole trapping defect in thermally grown SiO2 on Si
Conley, John F. ; Lenahan, P. M. ; Evans, H. L. ; Lowry, R. K. ; Morthorst, T. J.
[S.l.] : American Institute of Physics (AIP)
Published 1994
[S.l.] : American Institute of Physics (AIP)
Published 1994
| ISSN: |
1089-7550
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|---|---|
| Source: |
AIP Digital Archive
|
| Topics: |
Physics
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| Notes: |
Using electron spin resonance (ESR), a new electrically active point defect in thermally grown SiO2 films on Si has been detected. The defect has a large capture cross section for electrons when it is paramagnetic and holes when it is diamagnetic (ESR inactive). The g-tensor values, symmetry, and microwave power saturation characteristics are all similar to those of the well-known E' family of amorphous SiO2 defect centers. © 1994 American Institute of Physics.
|
| Type of Medium: |
Electronic Resource
|
| URL: |
| _version_ | 1798289651938623488 |
|---|---|
| autor | Conley, John F. Lenahan, P. M. Evans, H. L. Lowry, R. K. Morthorst, T. J. |
| autorsonst | Conley, John F. Lenahan, P. M. Evans, H. L. Lowry, R. K. Morthorst, T. J. |
| book_url | http://dx.doi.org/10.1063/1.357871 |
| datenlieferant | nat_lic_papers |
| hauptsatz | hsatz_simple |
| identnr | NLZ218554249 |
| issn | 1089-7550 |
| journal_name | Journal of Applied Physics |
| materialart | 1 |
| notes | Using electron spin resonance (ESR), a new electrically active point defect in thermally grown SiO2 films on Si has been detected. The defect has a large capture cross section for electrons when it is paramagnetic and holes when it is diamagnetic (ESR inactive). The g-tensor values, symmetry, and microwave power saturation characteristics are all similar to those of the well-known E' family of amorphous SiO2 defect centers. © 1994 American Institute of Physics. |
| package_name | American Institute of Physics (AIP) |
| publikationsjahr_anzeige | 1994 |
| publikationsjahr_facette | 1994 |
| publikationsjahr_intervall | 8009:1990-1994 |
| publikationsjahr_sort | 1994 |
| publikationsort | [S.l.] |
| publisher | American Institute of Physics (AIP) |
| reference | 76 (1994), S. 8186-8188 |
| search_space | articles |
| shingle_author_1 | Conley, John F. Lenahan, P. M. Evans, H. L. Lowry, R. K. Morthorst, T. J. |
| shingle_author_2 | Conley, John F. Lenahan, P. M. Evans, H. L. Lowry, R. K. Morthorst, T. J. |
| shingle_author_3 | Conley, John F. Lenahan, P. M. Evans, H. L. Lowry, R. K. Morthorst, T. J. |
| shingle_author_4 | Conley, John F. Lenahan, P. M. Evans, H. L. Lowry, R. K. Morthorst, T. J. |
| shingle_catch_all_1 | Conley, John F. Lenahan, P. M. Evans, H. L. Lowry, R. K. Morthorst, T. J. Electron-spin-resonance evidence for an impurity-related E'-like hole trapping defect in thermally grown SiO2 on Si Using electron spin resonance (ESR), a new electrically active point defect in thermally grown SiO2 films on Si has been detected. The defect has a large capture cross section for electrons when it is paramagnetic and holes when it is diamagnetic (ESR inactive). The g-tensor values, symmetry, and microwave power saturation characteristics are all similar to those of the well-known E' family of amorphous SiO2 defect centers. © 1994 American Institute of Physics. 1089-7550 10897550 American Institute of Physics (AIP) |
| shingle_catch_all_2 | Conley, John F. Lenahan, P. M. Evans, H. L. Lowry, R. K. Morthorst, T. J. Electron-spin-resonance evidence for an impurity-related E'-like hole trapping defect in thermally grown SiO2 on Si Using electron spin resonance (ESR), a new electrically active point defect in thermally grown SiO2 films on Si has been detected. The defect has a large capture cross section for electrons when it is paramagnetic and holes when it is diamagnetic (ESR inactive). The g-tensor values, symmetry, and microwave power saturation characteristics are all similar to those of the well-known E' family of amorphous SiO2 defect centers. © 1994 American Institute of Physics. 1089-7550 10897550 American Institute of Physics (AIP) |
| shingle_catch_all_3 | Conley, John F. Lenahan, P. M. Evans, H. L. Lowry, R. K. Morthorst, T. J. Electron-spin-resonance evidence for an impurity-related E'-like hole trapping defect in thermally grown SiO2 on Si Using electron spin resonance (ESR), a new electrically active point defect in thermally grown SiO2 films on Si has been detected. The defect has a large capture cross section for electrons when it is paramagnetic and holes when it is diamagnetic (ESR inactive). The g-tensor values, symmetry, and microwave power saturation characteristics are all similar to those of the well-known E' family of amorphous SiO2 defect centers. © 1994 American Institute of Physics. 1089-7550 10897550 American Institute of Physics (AIP) |
| shingle_catch_all_4 | Conley, John F. Lenahan, P. M. Evans, H. L. Lowry, R. K. Morthorst, T. J. Electron-spin-resonance evidence for an impurity-related E'-like hole trapping defect in thermally grown SiO2 on Si Using electron spin resonance (ESR), a new electrically active point defect in thermally grown SiO2 films on Si has been detected. The defect has a large capture cross section for electrons when it is paramagnetic and holes when it is diamagnetic (ESR inactive). The g-tensor values, symmetry, and microwave power saturation characteristics are all similar to those of the well-known E' family of amorphous SiO2 defect centers. © 1994 American Institute of Physics. 1089-7550 10897550 American Institute of Physics (AIP) |
| shingle_title_1 | Electron-spin-resonance evidence for an impurity-related E'-like hole trapping defect in thermally grown SiO2 on Si |
| shingle_title_2 | Electron-spin-resonance evidence for an impurity-related E'-like hole trapping defect in thermally grown SiO2 on Si |
| shingle_title_3 | Electron-spin-resonance evidence for an impurity-related E'-like hole trapping defect in thermally grown SiO2 on Si |
| shingle_title_4 | Electron-spin-resonance evidence for an impurity-related E'-like hole trapping defect in thermally grown SiO2 on Si |
| sigel_instance_filter | dkfz geomar wilbert ipn albert |
| source_archive | AIP Digital Archive |
| timestamp | 2024-05-06T08:04:14.201Z |
| titel | Electron-spin-resonance evidence for an impurity-related E'-like hole trapping defect in thermally grown SiO2 on Si |
| titel_suche | Electron-spin-resonance evidence for an impurity-related E'-like hole trapping defect in thermally grown SiO2 on Si |
| topic | U |
| uid | nat_lic_papers_NLZ218554249 |