Electron-spin-resonance evidence for an impurity-related E'-like hole trapping defect in thermally grown SiO2 on Si
Conley, John F. ; Lenahan, P. M. ; Evans, H. L. ; Lowry, R. K. ; Morthorst, T. J.
[S.l.] : American Institute of Physics (AIP)
Published 1994
[S.l.] : American Institute of Physics (AIP)
Published 1994
| ISSN: |
1089-7550
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|---|---|
| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
Using electron spin resonance (ESR), a new electrically active point defect in thermally grown SiO2 films on Si has been detected. The defect has a large capture cross section for electrons when it is paramagnetic and holes when it is diamagnetic (ESR inactive). The g-tensor values, symmetry, and microwave power saturation characteristics are all similar to those of the well-known E' family of amorphous SiO2 defect centers. © 1994 American Institute of Physics.
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| Type of Medium: |
Electronic Resource
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| URL: |