The use of graded InGaAs layers and patterned substrates to remove threading dislocations from GaAs on Si
Knall, J. ; Romano, L. T. ; Biegelsen, D. K. ; Bringans, R. D. ; Chui, H. C. ; Harris, J. S. ; Treat, D. W. ; Bour, D. P.
[S.l.] : American Institute of Physics (AIP)
Published 1994
[S.l.] : American Institute of Physics (AIP)
Published 1994
| ISSN: |
1089-7550
|
|---|---|
| Source: |
AIP Digital Archive
|
| Topics: |
Physics
|
| Notes: |
We have investigated threading dislocation (TD) removal from GaAs films on Si by introduction of additional InGaAs graded strain layers in combination with growth on patterned substrates. The substrate patterns consisted of mesas with 10–34 μm widths. The mesa sidewalls were either overhanging (concave), leading to free sidewalls for the film on the mesas, or outward sloping (convex) sidewalls with {111} orientation. The dislocation structure was studied using transmission electron microscopy. It was found that the graded strained layers led to a reduction of dislocation density by a factor of ∼5 in films grown both on mesas with concave sidewalls and on unpatterned substrates. This reduction was due to dislocation reactions leading to annihilation of TDs. For films with graded strained layers on mesas with convex sidewalls, an additional factor of ∼3 reduction in TD density was observed in the part of the film that was grown on top of the mesas. In this case all mobile TDs (TDs associated with 60° misfit dislocations, i.e., TDs that could glide to relieve misfit stress) were removed from the film on top of the mesas to the regions above the sidewalls and only TDs associated with 90° misfit dislocations remained. We suggest that this is due to pinning of the TDs associated with 60° misfit dislocations at the mesa edges and we have presented an explanation for this pinning in terms of the stress conditions at the {111} oriented mesa edges. In addition, this leads us to suggest that in order to obtain minimum TD density it is imperative to prevent formation of 90° misfit dislocation during lattice mismatched heteroepitaxial growth.
|
| Type of Medium: |
Electronic Resource
|
| URL: |
| _version_ | 1798289651876757505 |
|---|---|
| autor | Knall, J. Romano, L. T. Biegelsen, D. K. Bringans, R. D. Chui, H. C. Harris, J. S. Treat, D. W. Bour, D. P. |
| autorsonst | Knall, J. Romano, L. T. Biegelsen, D. K. Bringans, R. D. Chui, H. C. Harris, J. S. Treat, D. W. Bour, D. P. |
| book_url | http://dx.doi.org/10.1063/1.357572 |
| datenlieferant | nat_lic_papers |
| hauptsatz | hsatz_simple |
| identnr | NLZ218549458 |
| issn | 1089-7550 |
| journal_name | Journal of Applied Physics |
| materialart | 1 |
| notes | We have investigated threading dislocation (TD) removal from GaAs films on Si by introduction of additional InGaAs graded strain layers in combination with growth on patterned substrates. The substrate patterns consisted of mesas with 10–34 μm widths. The mesa sidewalls were either overhanging (concave), leading to free sidewalls for the film on the mesas, or outward sloping (convex) sidewalls with {111} orientation. The dislocation structure was studied using transmission electron microscopy. It was found that the graded strained layers led to a reduction of dislocation density by a factor of ∼5 in films grown both on mesas with concave sidewalls and on unpatterned substrates. This reduction was due to dislocation reactions leading to annihilation of TDs. For films with graded strained layers on mesas with convex sidewalls, an additional factor of ∼3 reduction in TD density was observed in the part of the film that was grown on top of the mesas. In this case all mobile TDs (TDs associated with 60° misfit dislocations, i.e., TDs that could glide to relieve misfit stress) were removed from the film on top of the mesas to the regions above the sidewalls and only TDs associated with 90° misfit dislocations remained. We suggest that this is due to pinning of the TDs associated with 60° misfit dislocations at the mesa edges and we have presented an explanation for this pinning in terms of the stress conditions at the {111} oriented mesa edges. In addition, this leads us to suggest that in order to obtain minimum TD density it is imperative to prevent formation of 90° misfit dislocation during lattice mismatched heteroepitaxial growth. |
| package_name | American Institute of Physics (AIP) |
| publikationsjahr_anzeige | 1994 |
| publikationsjahr_facette | 1994 |
| publikationsjahr_intervall | 8009:1990-1994 |
| publikationsjahr_sort | 1994 |
| publikationsort | [S.l.] |
| publisher | American Institute of Physics (AIP) |
| reference | 76 (1994), S. 2697-2702 |
| search_space | articles |
| shingle_author_1 | Knall, J. Romano, L. T. Biegelsen, D. K. Bringans, R. D. Chui, H. C. Harris, J. S. Treat, D. W. Bour, D. P. |
| shingle_author_2 | Knall, J. Romano, L. T. Biegelsen, D. K. Bringans, R. D. Chui, H. C. Harris, J. S. Treat, D. W. Bour, D. P. |
| shingle_author_3 | Knall, J. Romano, L. T. Biegelsen, D. K. Bringans, R. D. Chui, H. C. Harris, J. S. Treat, D. W. Bour, D. P. |
| shingle_author_4 | Knall, J. Romano, L. T. Biegelsen, D. K. Bringans, R. D. Chui, H. C. Harris, J. S. Treat, D. W. Bour, D. P. |
| shingle_catch_all_1 | Knall, J. Romano, L. T. Biegelsen, D. K. Bringans, R. D. Chui, H. C. Harris, J. S. Treat, D. W. Bour, D. P. The use of graded InGaAs layers and patterned substrates to remove threading dislocations from GaAs on Si We have investigated threading dislocation (TD) removal from GaAs films on Si by introduction of additional InGaAs graded strain layers in combination with growth on patterned substrates. The substrate patterns consisted of mesas with 10–34 μm widths. The mesa sidewalls were either overhanging (concave), leading to free sidewalls for the film on the mesas, or outward sloping (convex) sidewalls with {111} orientation. The dislocation structure was studied using transmission electron microscopy. It was found that the graded strained layers led to a reduction of dislocation density by a factor of ∼5 in films grown both on mesas with concave sidewalls and on unpatterned substrates. This reduction was due to dislocation reactions leading to annihilation of TDs. For films with graded strained layers on mesas with convex sidewalls, an additional factor of ∼3 reduction in TD density was observed in the part of the film that was grown on top of the mesas. In this case all mobile TDs (TDs associated with 60° misfit dislocations, i.e., TDs that could glide to relieve misfit stress) were removed from the film on top of the mesas to the regions above the sidewalls and only TDs associated with 90° misfit dislocations remained. We suggest that this is due to pinning of the TDs associated with 60° misfit dislocations at the mesa edges and we have presented an explanation for this pinning in terms of the stress conditions at the {111} oriented mesa edges. In addition, this leads us to suggest that in order to obtain minimum TD density it is imperative to prevent formation of 90° misfit dislocation during lattice mismatched heteroepitaxial growth. 1089-7550 10897550 American Institute of Physics (AIP) |
| shingle_catch_all_2 | Knall, J. Romano, L. T. Biegelsen, D. K. Bringans, R. D. Chui, H. C. Harris, J. S. Treat, D. W. Bour, D. P. The use of graded InGaAs layers and patterned substrates to remove threading dislocations from GaAs on Si We have investigated threading dislocation (TD) removal from GaAs films on Si by introduction of additional InGaAs graded strain layers in combination with growth on patterned substrates. The substrate patterns consisted of mesas with 10–34 μm widths. The mesa sidewalls were either overhanging (concave), leading to free sidewalls for the film on the mesas, or outward sloping (convex) sidewalls with {111} orientation. The dislocation structure was studied using transmission electron microscopy. It was found that the graded strained layers led to a reduction of dislocation density by a factor of ∼5 in films grown both on mesas with concave sidewalls and on unpatterned substrates. This reduction was due to dislocation reactions leading to annihilation of TDs. For films with graded strained layers on mesas with convex sidewalls, an additional factor of ∼3 reduction in TD density was observed in the part of the film that was grown on top of the mesas. In this case all mobile TDs (TDs associated with 60° misfit dislocations, i.e., TDs that could glide to relieve misfit stress) were removed from the film on top of the mesas to the regions above the sidewalls and only TDs associated with 90° misfit dislocations remained. We suggest that this is due to pinning of the TDs associated with 60° misfit dislocations at the mesa edges and we have presented an explanation for this pinning in terms of the stress conditions at the {111} oriented mesa edges. In addition, this leads us to suggest that in order to obtain minimum TD density it is imperative to prevent formation of 90° misfit dislocation during lattice mismatched heteroepitaxial growth. 1089-7550 10897550 American Institute of Physics (AIP) |
| shingle_catch_all_3 | Knall, J. Romano, L. T. Biegelsen, D. K. Bringans, R. D. Chui, H. C. Harris, J. S. Treat, D. W. Bour, D. P. The use of graded InGaAs layers and patterned substrates to remove threading dislocations from GaAs on Si We have investigated threading dislocation (TD) removal from GaAs films on Si by introduction of additional InGaAs graded strain layers in combination with growth on patterned substrates. The substrate patterns consisted of mesas with 10–34 μm widths. The mesa sidewalls were either overhanging (concave), leading to free sidewalls for the film on the mesas, or outward sloping (convex) sidewalls with {111} orientation. The dislocation structure was studied using transmission electron microscopy. It was found that the graded strained layers led to a reduction of dislocation density by a factor of ∼5 in films grown both on mesas with concave sidewalls and on unpatterned substrates. This reduction was due to dislocation reactions leading to annihilation of TDs. For films with graded strained layers on mesas with convex sidewalls, an additional factor of ∼3 reduction in TD density was observed in the part of the film that was grown on top of the mesas. In this case all mobile TDs (TDs associated with 60° misfit dislocations, i.e., TDs that could glide to relieve misfit stress) were removed from the film on top of the mesas to the regions above the sidewalls and only TDs associated with 90° misfit dislocations remained. We suggest that this is due to pinning of the TDs associated with 60° misfit dislocations at the mesa edges and we have presented an explanation for this pinning in terms of the stress conditions at the {111} oriented mesa edges. In addition, this leads us to suggest that in order to obtain minimum TD density it is imperative to prevent formation of 90° misfit dislocation during lattice mismatched heteroepitaxial growth. 1089-7550 10897550 American Institute of Physics (AIP) |
| shingle_catch_all_4 | Knall, J. Romano, L. T. Biegelsen, D. K. Bringans, R. D. Chui, H. C. Harris, J. S. Treat, D. W. Bour, D. P. The use of graded InGaAs layers and patterned substrates to remove threading dislocations from GaAs on Si We have investigated threading dislocation (TD) removal from GaAs films on Si by introduction of additional InGaAs graded strain layers in combination with growth on patterned substrates. The substrate patterns consisted of mesas with 10–34 μm widths. The mesa sidewalls were either overhanging (concave), leading to free sidewalls for the film on the mesas, or outward sloping (convex) sidewalls with {111} orientation. The dislocation structure was studied using transmission electron microscopy. It was found that the graded strained layers led to a reduction of dislocation density by a factor of ∼5 in films grown both on mesas with concave sidewalls and on unpatterned substrates. This reduction was due to dislocation reactions leading to annihilation of TDs. For films with graded strained layers on mesas with convex sidewalls, an additional factor of ∼3 reduction in TD density was observed in the part of the film that was grown on top of the mesas. In this case all mobile TDs (TDs associated with 60° misfit dislocations, i.e., TDs that could glide to relieve misfit stress) were removed from the film on top of the mesas to the regions above the sidewalls and only TDs associated with 90° misfit dislocations remained. We suggest that this is due to pinning of the TDs associated with 60° misfit dislocations at the mesa edges and we have presented an explanation for this pinning in terms of the stress conditions at the {111} oriented mesa edges. In addition, this leads us to suggest that in order to obtain minimum TD density it is imperative to prevent formation of 90° misfit dislocation during lattice mismatched heteroepitaxial growth. 1089-7550 10897550 American Institute of Physics (AIP) |
| shingle_title_1 | The use of graded InGaAs layers and patterned substrates to remove threading dislocations from GaAs on Si |
| shingle_title_2 | The use of graded InGaAs layers and patterned substrates to remove threading dislocations from GaAs on Si |
| shingle_title_3 | The use of graded InGaAs layers and patterned substrates to remove threading dislocations from GaAs on Si |
| shingle_title_4 | The use of graded InGaAs layers and patterned substrates to remove threading dislocations from GaAs on Si |
| sigel_instance_filter | dkfz geomar wilbert ipn albert |
| source_archive | AIP Digital Archive |
| timestamp | 2024-05-06T08:04:14.109Z |
| titel | The use of graded InGaAs layers and patterned substrates to remove threading dislocations from GaAs on Si |
| titel_suche | The use of graded InGaAs layers and patterned substrates to remove threading dislocations from GaAs on Si |
| topic | U |
| uid | nat_lic_papers_NLZ218549458 |