The use of graded InGaAs layers and patterned substrates to remove threading dislocations from GaAs on Si - Knall, J.; Romano, L. T.; Biegelsen, D. K.; Bringans, R. D.; Chui, H. C.; Harris, J. S.; Treat, D. W.; Bour, D. P. (American Institute of Physics (AIP), 1994)
http://dx.doi.org/10.1063/1.357572
Keywords: U