Internal friction in free-standing thin Al films
Heinen, D. ; Bohn, H. G. ; Schilling, W.
[S.l.] : American Institute of Physics (AIP)
Published 1995
[S.l.] : American Institute of Physics (AIP)
Published 1995
| ISSN: |
1089-7550
|
|---|---|
| Source: |
AIP Digital Archive
|
| Topics: |
Physics
|
| Notes: |
The internal friction of a 4 μm thick free-standing Al film has been investigated. For a measuring frequency of about 200 Hz a relaxation peak was found near 100 °C. Compared with a substrate-bonded film having the same columnar microstructure the peak is about three times higher while the temperature position is the same. This result confirms a model derived for substrate-bonded films which predicts that intrinsic grain boundary sliding controls the relaxation mechanism. The film/substrate-bonding only influences the peak height. It partly hinders the grain boundary sliding thereby reducing the relaxation strength. © 1995 American Institute of Physics.
|
| Type of Medium: |
Electronic Resource
|
| URL: |
| _version_ | 1798289649762828289 |
|---|---|
| autor | Heinen, D. Bohn, H. G. Schilling, W. |
| autorsonst | Heinen, D. Bohn, H. G. Schilling, W. |
| book_url | http://dx.doi.org/10.1063/1.360279 |
| datenlieferant | nat_lic_papers |
| hauptsatz | hsatz_simple |
| identnr | NLZ218531435 |
| issn | 1089-7550 |
| journal_name | Journal of Applied Physics |
| materialart | 1 |
| notes | The internal friction of a 4 μm thick free-standing Al film has been investigated. For a measuring frequency of about 200 Hz a relaxation peak was found near 100 °C. Compared with a substrate-bonded film having the same columnar microstructure the peak is about three times higher while the temperature position is the same. This result confirms a model derived for substrate-bonded films which predicts that intrinsic grain boundary sliding controls the relaxation mechanism. The film/substrate-bonding only influences the peak height. It partly hinders the grain boundary sliding thereby reducing the relaxation strength. © 1995 American Institute of Physics. |
| package_name | American Institute of Physics (AIP) |
| publikationsjahr_anzeige | 1995 |
| publikationsjahr_facette | 1995 |
| publikationsjahr_intervall | 8004:1995-1999 |
| publikationsjahr_sort | 1995 |
| publikationsort | [S.l.] |
| publisher | American Institute of Physics (AIP) |
| reference | 78 (1995), S. 893-896 |
| search_space | articles |
| shingle_author_1 | Heinen, D. Bohn, H. G. Schilling, W. |
| shingle_author_2 | Heinen, D. Bohn, H. G. Schilling, W. |
| shingle_author_3 | Heinen, D. Bohn, H. G. Schilling, W. |
| shingle_author_4 | Heinen, D. Bohn, H. G. Schilling, W. |
| shingle_catch_all_1 | Heinen, D. Bohn, H. G. Schilling, W. Internal friction in free-standing thin Al films The internal friction of a 4 μm thick free-standing Al film has been investigated. For a measuring frequency of about 200 Hz a relaxation peak was found near 100 °C. Compared with a substrate-bonded film having the same columnar microstructure the peak is about three times higher while the temperature position is the same. This result confirms a model derived for substrate-bonded films which predicts that intrinsic grain boundary sliding controls the relaxation mechanism. The film/substrate-bonding only influences the peak height. It partly hinders the grain boundary sliding thereby reducing the relaxation strength. © 1995 American Institute of Physics. 1089-7550 10897550 American Institute of Physics (AIP) |
| shingle_catch_all_2 | Heinen, D. Bohn, H. G. Schilling, W. Internal friction in free-standing thin Al films The internal friction of a 4 μm thick free-standing Al film has been investigated. For a measuring frequency of about 200 Hz a relaxation peak was found near 100 °C. Compared with a substrate-bonded film having the same columnar microstructure the peak is about three times higher while the temperature position is the same. This result confirms a model derived for substrate-bonded films which predicts that intrinsic grain boundary sliding controls the relaxation mechanism. The film/substrate-bonding only influences the peak height. It partly hinders the grain boundary sliding thereby reducing the relaxation strength. © 1995 American Institute of Physics. 1089-7550 10897550 American Institute of Physics (AIP) |
| shingle_catch_all_3 | Heinen, D. Bohn, H. G. Schilling, W. Internal friction in free-standing thin Al films The internal friction of a 4 μm thick free-standing Al film has been investigated. For a measuring frequency of about 200 Hz a relaxation peak was found near 100 °C. Compared with a substrate-bonded film having the same columnar microstructure the peak is about three times higher while the temperature position is the same. This result confirms a model derived for substrate-bonded films which predicts that intrinsic grain boundary sliding controls the relaxation mechanism. The film/substrate-bonding only influences the peak height. It partly hinders the grain boundary sliding thereby reducing the relaxation strength. © 1995 American Institute of Physics. 1089-7550 10897550 American Institute of Physics (AIP) |
| shingle_catch_all_4 | Heinen, D. Bohn, H. G. Schilling, W. Internal friction in free-standing thin Al films The internal friction of a 4 μm thick free-standing Al film has been investigated. For a measuring frequency of about 200 Hz a relaxation peak was found near 100 °C. Compared with a substrate-bonded film having the same columnar microstructure the peak is about three times higher while the temperature position is the same. This result confirms a model derived for substrate-bonded films which predicts that intrinsic grain boundary sliding controls the relaxation mechanism. The film/substrate-bonding only influences the peak height. It partly hinders the grain boundary sliding thereby reducing the relaxation strength. © 1995 American Institute of Physics. 1089-7550 10897550 American Institute of Physics (AIP) |
| shingle_title_1 | Internal friction in free-standing thin Al films |
| shingle_title_2 | Internal friction in free-standing thin Al films |
| shingle_title_3 | Internal friction in free-standing thin Al films |
| shingle_title_4 | Internal friction in free-standing thin Al films |
| sigel_instance_filter | dkfz geomar wilbert ipn albert |
| source_archive | AIP Digital Archive |
| timestamp | 2024-05-06T08:04:12.307Z |
| titel | Internal friction in free-standing thin Al films |
| titel_suche | Internal friction in free-standing thin Al films |
| topic | U |
| uid | nat_lic_papers_NLZ218531435 |