Internal friction in free-standing thin Al films
Heinen, D. ; Bohn, H. G. ; Schilling, W.
[S.l.] : American Institute of Physics (AIP)
Published 1995
[S.l.] : American Institute of Physics (AIP)
Published 1995
| ISSN: |
1089-7550
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|---|---|
| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
The internal friction of a 4 μm thick free-standing Al film has been investigated. For a measuring frequency of about 200 Hz a relaxation peak was found near 100 °C. Compared with a substrate-bonded film having the same columnar microstructure the peak is about three times higher while the temperature position is the same. This result confirms a model derived for substrate-bonded films which predicts that intrinsic grain boundary sliding controls the relaxation mechanism. The film/substrate-bonding only influences the peak height. It partly hinders the grain boundary sliding thereby reducing the relaxation strength. © 1995 American Institute of Physics.
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| Type of Medium: |
Electronic Resource
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| URL: |