Effect of microstructure on excitonic luminescence of spontaneously ordered Ga0.52In0.48P alloys
Cheong, Hyeonsik M. ; Mascarenhas, A. ; Ahrenkiel, S. P. ; Jones, K. M. ; Geisz, J. F. ; Olson, J. M.
[S.l.] : American Institute of Physics (AIP)
Published 1998
[S.l.] : American Institute of Physics (AIP)
Published 1998
| ISSN: |
1089-7550
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|---|---|
| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
We compare the results of low-temperature (4.2 K) microphotoluminescence (PL) measurements on cleaved edges of spontaneously ordered GaInP2 alloy samples with the results of cross-section transmission electron microscopy (TEM). The TEM dark-field images show that the size of ordered domains grows as the deposition progresses. The excitonic luminescence peak in the micro-PL spectra of GaInP2 is stronger near the surface of the thin film than near the substrate. From these results, we conclude that there is a direct correlation between the domain size or alternatively, the density of domain boundaries, and the relative strength of the excitonic peak. © 1998 American Institute of Physics.
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| Type of Medium: |
Electronic Resource
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| URL: |