Effect of microstructure on excitonic luminescence of spontaneously ordered Ga0.52In0.48P alloys
Cheong, Hyeonsik M. ; Mascarenhas, A. ; Ahrenkiel, S. P. ; Jones, K. M. ; Geisz, J. F. ; Olson, J. M.
[S.l.] : American Institute of Physics (AIP)
Published 1998
[S.l.] : American Institute of Physics (AIP)
Published 1998
| ISSN: |
1089-7550
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|---|---|
| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
We compare the results of low-temperature (4.2 K) microphotoluminescence (PL) measurements on cleaved edges of spontaneously ordered GaInP2 alloy samples with the results of cross-section transmission electron microscopy (TEM). The TEM dark-field images show that the size of ordered domains grows as the deposition progresses. The excitonic luminescence peak in the micro-PL spectra of GaInP2 is stronger near the surface of the thin film than near the substrate. From these results, we conclude that there is a direct correlation between the domain size or alternatively, the density of domain boundaries, and the relative strength of the excitonic peak. © 1998 American Institute of Physics.
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| Type of Medium: |
Electronic Resource
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| URL: |
| _version_ | 1798289641288237056 |
|---|---|
| autor | Cheong, Hyeonsik M. Mascarenhas, A. Ahrenkiel, S. P. Jones, K. M. Geisz, J. F. Olson, J. M. |
| autorsonst | Cheong, Hyeonsik M. Mascarenhas, A. Ahrenkiel, S. P. Jones, K. M. Geisz, J. F. Olson, J. M. |
| book_url | http://dx.doi.org/10.1063/1.367371 |
| datenlieferant | nat_lic_papers |
| hauptsatz | hsatz_simple |
| identnr | NLZ21846424X |
| issn | 1089-7550 |
| journal_name | Journal of Applied Physics |
| materialart | 1 |
| notes | We compare the results of low-temperature (4.2 K) microphotoluminescence (PL) measurements on cleaved edges of spontaneously ordered GaInP2 alloy samples with the results of cross-section transmission electron microscopy (TEM). The TEM dark-field images show that the size of ordered domains grows as the deposition progresses. The excitonic luminescence peak in the micro-PL spectra of GaInP2 is stronger near the surface of the thin film than near the substrate. From these results, we conclude that there is a direct correlation between the domain size or alternatively, the density of domain boundaries, and the relative strength of the excitonic peak. © 1998 American Institute of Physics. |
| package_name | American Institute of Physics (AIP) |
| publikationsjahr_anzeige | 1998 |
| publikationsjahr_facette | 1998 |
| publikationsjahr_intervall | 8004:1995-1999 |
| publikationsjahr_sort | 1998 |
| publikationsort | [S.l.] |
| publisher | American Institute of Physics (AIP) |
| reference | 83 (1998), S. 5418-5420 |
| search_space | articles |
| shingle_author_1 | Cheong, Hyeonsik M. Mascarenhas, A. Ahrenkiel, S. P. Jones, K. M. Geisz, J. F. Olson, J. M. |
| shingle_author_2 | Cheong, Hyeonsik M. Mascarenhas, A. Ahrenkiel, S. P. Jones, K. M. Geisz, J. F. Olson, J. M. |
| shingle_author_3 | Cheong, Hyeonsik M. Mascarenhas, A. Ahrenkiel, S. P. Jones, K. M. Geisz, J. F. Olson, J. M. |
| shingle_author_4 | Cheong, Hyeonsik M. Mascarenhas, A. Ahrenkiel, S. P. Jones, K. M. Geisz, J. F. Olson, J. M. |
| shingle_catch_all_1 | Cheong, Hyeonsik M. Mascarenhas, A. Ahrenkiel, S. P. Jones, K. M. Geisz, J. F. Olson, J. M. Effect of microstructure on excitonic luminescence of spontaneously ordered Ga0.52In0.48P alloys We compare the results of low-temperature (4.2 K) microphotoluminescence (PL) measurements on cleaved edges of spontaneously ordered GaInP2 alloy samples with the results of cross-section transmission electron microscopy (TEM). The TEM dark-field images show that the size of ordered domains grows as the deposition progresses. The excitonic luminescence peak in the micro-PL spectra of GaInP2 is stronger near the surface of the thin film than near the substrate. From these results, we conclude that there is a direct correlation between the domain size or alternatively, the density of domain boundaries, and the relative strength of the excitonic peak. © 1998 American Institute of Physics. 1089-7550 10897550 American Institute of Physics (AIP) |
| shingle_catch_all_2 | Cheong, Hyeonsik M. Mascarenhas, A. Ahrenkiel, S. P. Jones, K. M. Geisz, J. F. Olson, J. M. Effect of microstructure on excitonic luminescence of spontaneously ordered Ga0.52In0.48P alloys We compare the results of low-temperature (4.2 K) microphotoluminescence (PL) measurements on cleaved edges of spontaneously ordered GaInP2 alloy samples with the results of cross-section transmission electron microscopy (TEM). The TEM dark-field images show that the size of ordered domains grows as the deposition progresses. The excitonic luminescence peak in the micro-PL spectra of GaInP2 is stronger near the surface of the thin film than near the substrate. From these results, we conclude that there is a direct correlation between the domain size or alternatively, the density of domain boundaries, and the relative strength of the excitonic peak. © 1998 American Institute of Physics. 1089-7550 10897550 American Institute of Physics (AIP) |
| shingle_catch_all_3 | Cheong, Hyeonsik M. Mascarenhas, A. Ahrenkiel, S. P. Jones, K. M. Geisz, J. F. Olson, J. M. Effect of microstructure on excitonic luminescence of spontaneously ordered Ga0.52In0.48P alloys We compare the results of low-temperature (4.2 K) microphotoluminescence (PL) measurements on cleaved edges of spontaneously ordered GaInP2 alloy samples with the results of cross-section transmission electron microscopy (TEM). The TEM dark-field images show that the size of ordered domains grows as the deposition progresses. The excitonic luminescence peak in the micro-PL spectra of GaInP2 is stronger near the surface of the thin film than near the substrate. From these results, we conclude that there is a direct correlation between the domain size or alternatively, the density of domain boundaries, and the relative strength of the excitonic peak. © 1998 American Institute of Physics. 1089-7550 10897550 American Institute of Physics (AIP) |
| shingle_catch_all_4 | Cheong, Hyeonsik M. Mascarenhas, A. Ahrenkiel, S. P. Jones, K. M. Geisz, J. F. Olson, J. M. Effect of microstructure on excitonic luminescence of spontaneously ordered Ga0.52In0.48P alloys We compare the results of low-temperature (4.2 K) microphotoluminescence (PL) measurements on cleaved edges of spontaneously ordered GaInP2 alloy samples with the results of cross-section transmission electron microscopy (TEM). The TEM dark-field images show that the size of ordered domains grows as the deposition progresses. The excitonic luminescence peak in the micro-PL spectra of GaInP2 is stronger near the surface of the thin film than near the substrate. From these results, we conclude that there is a direct correlation between the domain size or alternatively, the density of domain boundaries, and the relative strength of the excitonic peak. © 1998 American Institute of Physics. 1089-7550 10897550 American Institute of Physics (AIP) |
| shingle_title_1 | Effect of microstructure on excitonic luminescence of spontaneously ordered Ga0.52In0.48P alloys |
| shingle_title_2 | Effect of microstructure on excitonic luminescence of spontaneously ordered Ga0.52In0.48P alloys |
| shingle_title_3 | Effect of microstructure on excitonic luminescence of spontaneously ordered Ga0.52In0.48P alloys |
| shingle_title_4 | Effect of microstructure on excitonic luminescence of spontaneously ordered Ga0.52In0.48P alloys |
| sigel_instance_filter | dkfz geomar wilbert ipn albert |
| source_archive | AIP Digital Archive |
| timestamp | 2024-05-06T08:04:04.329Z |
| titel | Effect of microstructure on excitonic luminescence of spontaneously ordered Ga0.52In0.48P alloys |
| titel_suche | Effect of microstructure on excitonic luminescence of spontaneously ordered Ga0.52In0.48P alloys |
| topic | U |
| uid | nat_lic_papers_NLZ21846424X |