Spectroscopic ellipsometry and electrical studies of as-grown and rapid thermal oxidized Si1−x−yGexCy films
| ISSN: |
1089-7550
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| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
Transmission electron microscopy results showed the formation of SiC precipitation in a rapid thermally oxidized (RTO) Si1−x−yGexCy sample with high-C content. The spectroscopic ellipsometry results showed that the E1 gap increased and E2 gap decreased as the C concentration increased. For the oxidized samples, the amplitude of the E2 transitions reduced rapidly and the E1 transition shifted to a lower energy. The reduction in the E2 transitions was due to the presence of the oxide layer. A high-Ge content layer and the low-C content in the RTO films accounted for the E1 shift to lower energy. The electrical measurements showed that RTO at 800 °C did not improve the oxide quality as compared to 1000 °C. © 2001 American Institute of Physics.
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| Type of Medium: |
Electronic Resource
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| URL: |