Evolution of structural order in germanium ion-implanted amorphous silicon layers
Cheng, S. L. ; Lin, H. H. ; He, J. H. ; Chiang, T. F. ; Yu, C. H. ; Chen, L. J.
[S.l.] : American Institute of Physics (AIP)
Published 2002
[S.l.] : American Institute of Physics (AIP)
Published 2002
| ISSN: |
1089-7550
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|---|---|
| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
High-resolution transmission electron microscopy in conjunction with autocorrelation function analysis have been applied to investigate the evolution of structural order in germanium ion-implanted amorphous silicon (a-Si) layers. A high density of Si nanocrystallites as small as 1 nm in size was detected in as-implanted a-Si layers. The density of embedded nanocrystalline Si was found to diminish in a-Si layers with annealing temperature first then increase. The results are discussed in the context of free energy change with annealing temperature. © 2002 American Institute of Physics.
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| Type of Medium: |
Electronic Resource
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| URL: |