Electric field induced shifts in exciton luminescence in ZnSe/(Zn,Mn)Se superlattices

Fu, Qiang ; Nurmikko, A. V. ; Kolodziejski, L. A. ; Gunshor, R. L. ; Wu, J.-W.

Woodbury, NY : American Institute of Physics (AIP)
Published 1987
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Application of moderate electric fields to ZnSe/(Zn,Mn)Se quantum wells yields distinct spectral shifts of the recombining exciton luminescence. This shows that confinement effects in this heterostructure are sufficient to increase the exciton ionization threshold. At high applied fields and low temperatures, injection of hot electrons from the n+GaAs/ZnSe heterojunction at our substrate/buffer layer excites yellow luminescence from internal transitions of the Mn ion in (Zn,Mn)Se layers.
Type of Medium:
Electronic Resource
URL:
_version_ 1798289636180623360
autor Fu, Qiang
Nurmikko, A. V.
Kolodziejski, L. A.
Gunshor, R. L.
Wu, J.-W.
autorsonst Fu, Qiang
Nurmikko, A. V.
Kolodziejski, L. A.
Gunshor, R. L.
Wu, J.-W.
book_url http://dx.doi.org/10.1063/1.98353
datenlieferant nat_lic_papers
hauptsatz hsatz_simple
identnr NLZ218330820
issn 1077-3118
journal_name Applied Physics Letters
materialart 1
notes Application of moderate electric fields to ZnSe/(Zn,Mn)Se quantum wells yields distinct spectral shifts of the recombining exciton luminescence. This shows that confinement effects in this heterostructure are sufficient to increase the exciton ionization threshold. At high applied fields and low temperatures, injection of hot electrons from the n+GaAs/ZnSe heterojunction at our substrate/buffer layer excites yellow luminescence from internal transitions of the Mn ion in (Zn,Mn)Se layers.
package_name American Institute of Physics (AIP)
publikationsjahr_anzeige 1987
publikationsjahr_facette 1987
publikationsjahr_intervall 8014:1985-1989
publikationsjahr_sort 1987
publikationsort Woodbury, NY
publisher American Institute of Physics (AIP)
reference 51 (1987), S. 578-580
search_space articles
shingle_author_1 Fu, Qiang
Nurmikko, A. V.
Kolodziejski, L. A.
Gunshor, R. L.
Wu, J.-W.
shingle_author_2 Fu, Qiang
Nurmikko, A. V.
Kolodziejski, L. A.
Gunshor, R. L.
Wu, J.-W.
shingle_author_3 Fu, Qiang
Nurmikko, A. V.
Kolodziejski, L. A.
Gunshor, R. L.
Wu, J.-W.
shingle_author_4 Fu, Qiang
Nurmikko, A. V.
Kolodziejski, L. A.
Gunshor, R. L.
Wu, J.-W.
shingle_catch_all_1 Fu, Qiang
Nurmikko, A. V.
Kolodziejski, L. A.
Gunshor, R. L.
Wu, J.-W.
Electric field induced shifts in exciton luminescence in ZnSe/(Zn,Mn)Se superlattices
Application of moderate electric fields to ZnSe/(Zn,Mn)Se quantum wells yields distinct spectral shifts of the recombining exciton luminescence. This shows that confinement effects in this heterostructure are sufficient to increase the exciton ionization threshold. At high applied fields and low temperatures, injection of hot electrons from the n+GaAs/ZnSe heterojunction at our substrate/buffer layer excites yellow luminescence from internal transitions of the Mn ion in (Zn,Mn)Se layers.
1077-3118
10773118
American Institute of Physics (AIP)
shingle_catch_all_2 Fu, Qiang
Nurmikko, A. V.
Kolodziejski, L. A.
Gunshor, R. L.
Wu, J.-W.
Electric field induced shifts in exciton luminescence in ZnSe/(Zn,Mn)Se superlattices
Application of moderate electric fields to ZnSe/(Zn,Mn)Se quantum wells yields distinct spectral shifts of the recombining exciton luminescence. This shows that confinement effects in this heterostructure are sufficient to increase the exciton ionization threshold. At high applied fields and low temperatures, injection of hot electrons from the n+GaAs/ZnSe heterojunction at our substrate/buffer layer excites yellow luminescence from internal transitions of the Mn ion in (Zn,Mn)Se layers.
1077-3118
10773118
American Institute of Physics (AIP)
shingle_catch_all_3 Fu, Qiang
Nurmikko, A. V.
Kolodziejski, L. A.
Gunshor, R. L.
Wu, J.-W.
Electric field induced shifts in exciton luminescence in ZnSe/(Zn,Mn)Se superlattices
Application of moderate electric fields to ZnSe/(Zn,Mn)Se quantum wells yields distinct spectral shifts of the recombining exciton luminescence. This shows that confinement effects in this heterostructure are sufficient to increase the exciton ionization threshold. At high applied fields and low temperatures, injection of hot electrons from the n+GaAs/ZnSe heterojunction at our substrate/buffer layer excites yellow luminescence from internal transitions of the Mn ion in (Zn,Mn)Se layers.
1077-3118
10773118
American Institute of Physics (AIP)
shingle_catch_all_4 Fu, Qiang
Nurmikko, A. V.
Kolodziejski, L. A.
Gunshor, R. L.
Wu, J.-W.
Electric field induced shifts in exciton luminescence in ZnSe/(Zn,Mn)Se superlattices
Application of moderate electric fields to ZnSe/(Zn,Mn)Se quantum wells yields distinct spectral shifts of the recombining exciton luminescence. This shows that confinement effects in this heterostructure are sufficient to increase the exciton ionization threshold. At high applied fields and low temperatures, injection of hot electrons from the n+GaAs/ZnSe heterojunction at our substrate/buffer layer excites yellow luminescence from internal transitions of the Mn ion in (Zn,Mn)Se layers.
1077-3118
10773118
American Institute of Physics (AIP)
shingle_title_1 Electric field induced shifts in exciton luminescence in ZnSe/(Zn,Mn)Se superlattices
shingle_title_2 Electric field induced shifts in exciton luminescence in ZnSe/(Zn,Mn)Se superlattices
shingle_title_3 Electric field induced shifts in exciton luminescence in ZnSe/(Zn,Mn)Se superlattices
shingle_title_4 Electric field induced shifts in exciton luminescence in ZnSe/(Zn,Mn)Se superlattices
sigel_instance_filter dkfz
geomar
wilbert
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source_archive AIP Digital Archive
timestamp 2024-05-06T08:03:58.903Z
titel Electric field induced shifts in exciton luminescence in ZnSe/(Zn,Mn)Se superlattices
titel_suche Electric field induced shifts in exciton luminescence in ZnSe/(Zn,Mn)Se superlattices
topic U
uid nat_lic_papers_NLZ218330820