Electric field induced shifts in exciton luminescence in ZnSe/(Zn,Mn)Se superlattices
Fu, Qiang ; Nurmikko, A. V. ; Kolodziejski, L. A. ; Gunshor, R. L. ; Wu, J.-W.
Woodbury, NY : American Institute of Physics (AIP)
Published 1987
Woodbury, NY : American Institute of Physics (AIP)
Published 1987
| ISSN: |
1077-3118
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| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
Application of moderate electric fields to ZnSe/(Zn,Mn)Se quantum wells yields distinct spectral shifts of the recombining exciton luminescence. This shows that confinement effects in this heterostructure are sufficient to increase the exciton ionization threshold. At high applied fields and low temperatures, injection of hot electrons from the n+GaAs/ZnSe heterojunction at our substrate/buffer layer excites yellow luminescence from internal transitions of the Mn ion in (Zn,Mn)Se layers.
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| Type of Medium: |
Electronic Resource
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| URL: |