Low-threshold GaAs/AlGaAs lasers grown on Si by organometallic vapor phase epitaxy
Choi, H. K. ; Lee, J. W. ; Salerno, J. P. ; Connors, M. K. ; Tsaur, B-Y. ; Fan, J. C. C.
Woodbury, NY : American Institute of Physics (AIP)
Published 1988
Woodbury, NY : American Institute of Physics (AIP)
Published 1988
| ISSN: |
1077-3118
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| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
Low-threshold double-heterostructure ridge-waveguide lasers have been fabricated in GaAs/AlGaAs layers grown on Si by organometallic vapor phase epitaxy. The pulsed threshold current of the best ridge-waveguide laser is 50 mA, with differential quantum efficiency of about 9% per facet. Broad-area lasers fabricated on the same wafer have pulsed threshold current densities as low as 300 A/cm2 .
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| Type of Medium: |
Electronic Resource
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| URL: |