Low-threshold GaAs/AlGaAs lasers grown on Si by organometallic vapor phase epitaxy
Choi, H. K. ; Lee, J. W. ; Salerno, J. P. ; Connors, M. K. ; Tsaur, B-Y. ; Fan, J. C. C.
Woodbury, NY : American Institute of Physics (AIP)
Published 1988
Woodbury, NY : American Institute of Physics (AIP)
Published 1988
| ISSN: |
1077-3118
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|---|---|
| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
Low-threshold double-heterostructure ridge-waveguide lasers have been fabricated in GaAs/AlGaAs layers grown on Si by organometallic vapor phase epitaxy. The pulsed threshold current of the best ridge-waveguide laser is 50 mA, with differential quantum efficiency of about 9% per facet. Broad-area lasers fabricated on the same wafer have pulsed threshold current densities as low as 300 A/cm2 .
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| Type of Medium: |
Electronic Resource
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| URL: |
| _version_ | 1798289635838787584 |
|---|---|
| autor | Choi, H. K. Lee, J. W. Salerno, J. P. Connors, M. K. Tsaur, B-Y. Fan, J. C. C. |
| autorsonst | Choi, H. K. Lee, J. W. Salerno, J. P. Connors, M. K. Tsaur, B-Y. Fan, J. C. C. |
| book_url | http://dx.doi.org/10.1063/1.99178 |
| datenlieferant | nat_lic_papers |
| hauptsatz | hsatz_simple |
| identnr | NLZ218328788 |
| issn | 1077-3118 |
| journal_name | Applied Physics Letters |
| materialart | 1 |
| notes | Low-threshold double-heterostructure ridge-waveguide lasers have been fabricated in GaAs/AlGaAs layers grown on Si by organometallic vapor phase epitaxy. The pulsed threshold current of the best ridge-waveguide laser is 50 mA, with differential quantum efficiency of about 9% per facet. Broad-area lasers fabricated on the same wafer have pulsed threshold current densities as low as 300 A/cm2 . |
| package_name | American Institute of Physics (AIP) |
| publikationsjahr_anzeige | 1988 |
| publikationsjahr_facette | 1988 |
| publikationsjahr_intervall | 8014:1985-1989 |
| publikationsjahr_sort | 1988 |
| publikationsort | Woodbury, NY |
| publisher | American Institute of Physics (AIP) |
| reference | 52 (1988), S. 1114-1115 |
| search_space | articles |
| shingle_author_1 | Choi, H. K. Lee, J. W. Salerno, J. P. Connors, M. K. Tsaur, B-Y. Fan, J. C. C. |
| shingle_author_2 | Choi, H. K. Lee, J. W. Salerno, J. P. Connors, M. K. Tsaur, B-Y. Fan, J. C. C. |
| shingle_author_3 | Choi, H. K. Lee, J. W. Salerno, J. P. Connors, M. K. Tsaur, B-Y. Fan, J. C. C. |
| shingle_author_4 | Choi, H. K. Lee, J. W. Salerno, J. P. Connors, M. K. Tsaur, B-Y. Fan, J. C. C. |
| shingle_catch_all_1 | Choi, H. K. Lee, J. W. Salerno, J. P. Connors, M. K. Tsaur, B-Y. Fan, J. C. C. Low-threshold GaAs/AlGaAs lasers grown on Si by organometallic vapor phase epitaxy Low-threshold double-heterostructure ridge-waveguide lasers have been fabricated in GaAs/AlGaAs layers grown on Si by organometallic vapor phase epitaxy. The pulsed threshold current of the best ridge-waveguide laser is 50 mA, with differential quantum efficiency of about 9% per facet. Broad-area lasers fabricated on the same wafer have pulsed threshold current densities as low as 300 A/cm2 . 1077-3118 10773118 American Institute of Physics (AIP) |
| shingle_catch_all_2 | Choi, H. K. Lee, J. W. Salerno, J. P. Connors, M. K. Tsaur, B-Y. Fan, J. C. C. Low-threshold GaAs/AlGaAs lasers grown on Si by organometallic vapor phase epitaxy Low-threshold double-heterostructure ridge-waveguide lasers have been fabricated in GaAs/AlGaAs layers grown on Si by organometallic vapor phase epitaxy. The pulsed threshold current of the best ridge-waveguide laser is 50 mA, with differential quantum efficiency of about 9% per facet. Broad-area lasers fabricated on the same wafer have pulsed threshold current densities as low as 300 A/cm2 . 1077-3118 10773118 American Institute of Physics (AIP) |
| shingle_catch_all_3 | Choi, H. K. Lee, J. W. Salerno, J. P. Connors, M. K. Tsaur, B-Y. Fan, J. C. C. Low-threshold GaAs/AlGaAs lasers grown on Si by organometallic vapor phase epitaxy Low-threshold double-heterostructure ridge-waveguide lasers have been fabricated in GaAs/AlGaAs layers grown on Si by organometallic vapor phase epitaxy. The pulsed threshold current of the best ridge-waveguide laser is 50 mA, with differential quantum efficiency of about 9% per facet. Broad-area lasers fabricated on the same wafer have pulsed threshold current densities as low as 300 A/cm2 . 1077-3118 10773118 American Institute of Physics (AIP) |
| shingle_catch_all_4 | Choi, H. K. Lee, J. W. Salerno, J. P. Connors, M. K. Tsaur, B-Y. Fan, J. C. C. Low-threshold GaAs/AlGaAs lasers grown on Si by organometallic vapor phase epitaxy Low-threshold double-heterostructure ridge-waveguide lasers have been fabricated in GaAs/AlGaAs layers grown on Si by organometallic vapor phase epitaxy. The pulsed threshold current of the best ridge-waveguide laser is 50 mA, with differential quantum efficiency of about 9% per facet. Broad-area lasers fabricated on the same wafer have pulsed threshold current densities as low as 300 A/cm2 . 1077-3118 10773118 American Institute of Physics (AIP) |
| shingle_title_1 | Low-threshold GaAs/AlGaAs lasers grown on Si by organometallic vapor phase epitaxy |
| shingle_title_2 | Low-threshold GaAs/AlGaAs lasers grown on Si by organometallic vapor phase epitaxy |
| shingle_title_3 | Low-threshold GaAs/AlGaAs lasers grown on Si by organometallic vapor phase epitaxy |
| shingle_title_4 | Low-threshold GaAs/AlGaAs lasers grown on Si by organometallic vapor phase epitaxy |
| sigel_instance_filter | dkfz geomar wilbert ipn albert |
| source_archive | AIP Digital Archive |
| timestamp | 2024-05-06T08:03:59.015Z |
| titel | Low-threshold GaAs/AlGaAs lasers grown on Si by organometallic vapor phase epitaxy |
| titel_suche | Low-threshold GaAs/AlGaAs lasers grown on Si by organometallic vapor phase epitaxy |
| topic | U |
| uid | nat_lic_papers_NLZ218328788 |