Heteroepitaxial growth of Ge films on Si substrates by molecular beam epitaxy
Zhou, G. L. ; Chen, K. M. ; Jiang, W. D. ; Sheng, C. ; Zhang, X. J. ; Wang, Xun
Woodbury, NY : American Institute of Physics (AIP)
Published 1988
Woodbury, NY : American Institute of Physics (AIP)
Published 1988
| ISSN: |
1077-3118
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|---|---|
| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
A new approach of growing thick Ge layers on Si substrates by molecular beam epitaxy is presented. A 30–80 A(ring) thick Ge overlayer is first deposited on the Si(100) substrate at room temperature. By thermally annealing the sample to 300 or 500 °C for 10 min, the Ge atoms cluster into randomly distributed islands which would play a role in releasing the mismatch stress at the interface. The Ge film of 10 000 A(ring) thickness epitaxially grown on this surface at 550 °C shows a better crystalline quality than that grown by a conventional method. A full width at half maximum of 262 s for the Ge (400) x-ray diffraction peak has been achieved.
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| Type of Medium: |
Electronic Resource
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| URL: |