Zhou, G. L., Chen, K. M., Jiang, W. D., Sheng, C., Zhang, X. J., & Wang, X. (1988). Heteroepitaxial growth of Ge films on Si substrates by molecular beam epitaxy. American Institute of Physics (AIP).
Chicago Style (17th ed.) CitationZhou, G. L., K. M. Chen, W. D. Jiang, C. Sheng, X. J. Zhang, and Xun Wang. Heteroepitaxial Growth of Ge Films on Si Substrates by Molecular Beam Epitaxy. Woodbury, NY: American Institute of Physics (AIP), 1988.
MLA (9th ed.) CitationZhou, G. L., et al. Heteroepitaxial Growth of Ge Films on Si Substrates by Molecular Beam Epitaxy. American Institute of Physics (AIP), 1988.
Warning: These citations may not always be 100% accurate.