High quality InP layers grown by organometallic vapor phase epitaxy using tertiarybutylphosphine and phosphine
Saxena, R. R. ; Fouquet, J. E. ; Sardi, V. M. ; Moon, R. L.
Woodbury, NY : American Institute of Physics (AIP)
Published 1988
Woodbury, NY : American Institute of Physics (AIP)
Published 1988
| ISSN: |
1077-3118
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|---|---|
| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
A systematic study compares the quality of InP epitaxial layers grown by low-pressure organometallic vapor phase epitaxy (OMVPE) using triethylindium, phosphine, and tertiarybutylphosphine (TBP) sources. High quality InP layers are obtained with either phosphorus source for growth at a high V/III ratio. The full widths at half-maximum (FWHM) of the main 4 K photoluminescence peak from InP layers grown with phosphine and TBP sources are 1.1 and 1.3 meV, respectively. This 1.3 meV FWHM is the narrowest reported for InP grown by OMVPE with a nonhydride phosphorus source. High quality InP layers can be grown at a lower V/III ratio with the TBP source than with the phosphine source.
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| Type of Medium: |
Electronic Resource
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| URL: |
| _version_ | 1798289634402238465 |
|---|---|
| autor | Saxena, R. R. Fouquet, J. E. Sardi, V. M. Moon, R. L. |
| autorsonst | Saxena, R. R. Fouquet, J. E. Sardi, V. M. Moon, R. L. |
| book_url | http://dx.doi.org/10.1063/1.99903 |
| datenlieferant | nat_lic_papers |
| hauptsatz | hsatz_simple |
| identnr | NLZ218315708 |
| issn | 1077-3118 |
| journal_name | Applied Physics Letters |
| materialart | 1 |
| notes | A systematic study compares the quality of InP epitaxial layers grown by low-pressure organometallic vapor phase epitaxy (OMVPE) using triethylindium, phosphine, and tertiarybutylphosphine (TBP) sources. High quality InP layers are obtained with either phosphorus source for growth at a high V/III ratio. The full widths at half-maximum (FWHM) of the main 4 K photoluminescence peak from InP layers grown with phosphine and TBP sources are 1.1 and 1.3 meV, respectively. This 1.3 meV FWHM is the narrowest reported for InP grown by OMVPE with a nonhydride phosphorus source. High quality InP layers can be grown at a lower V/III ratio with the TBP source than with the phosphine source. |
| package_name | American Institute of Physics (AIP) |
| publikationsjahr_anzeige | 1988 |
| publikationsjahr_facette | 1988 |
| publikationsjahr_intervall | 8014:1985-1989 |
| publikationsjahr_sort | 1988 |
| publikationsort | Woodbury, NY |
| publisher | American Institute of Physics (AIP) |
| reference | 53 (1988), S. 304-306 |
| search_space | articles |
| shingle_author_1 | Saxena, R. R. Fouquet, J. E. Sardi, V. M. Moon, R. L. |
| shingle_author_2 | Saxena, R. R. Fouquet, J. E. Sardi, V. M. Moon, R. L. |
| shingle_author_3 | Saxena, R. R. Fouquet, J. E. Sardi, V. M. Moon, R. L. |
| shingle_author_4 | Saxena, R. R. Fouquet, J. E. Sardi, V. M. Moon, R. L. |
| shingle_catch_all_1 | Saxena, R. R. Fouquet, J. E. Sardi, V. M. Moon, R. L. High quality InP layers grown by organometallic vapor phase epitaxy using tertiarybutylphosphine and phosphine A systematic study compares the quality of InP epitaxial layers grown by low-pressure organometallic vapor phase epitaxy (OMVPE) using triethylindium, phosphine, and tertiarybutylphosphine (TBP) sources. High quality InP layers are obtained with either phosphorus source for growth at a high V/III ratio. The full widths at half-maximum (FWHM) of the main 4 K photoluminescence peak from InP layers grown with phosphine and TBP sources are 1.1 and 1.3 meV, respectively. This 1.3 meV FWHM is the narrowest reported for InP grown by OMVPE with a nonhydride phosphorus source. High quality InP layers can be grown at a lower V/III ratio with the TBP source than with the phosphine source. 1077-3118 10773118 American Institute of Physics (AIP) |
| shingle_catch_all_2 | Saxena, R. R. Fouquet, J. E. Sardi, V. M. Moon, R. L. High quality InP layers grown by organometallic vapor phase epitaxy using tertiarybutylphosphine and phosphine A systematic study compares the quality of InP epitaxial layers grown by low-pressure organometallic vapor phase epitaxy (OMVPE) using triethylindium, phosphine, and tertiarybutylphosphine (TBP) sources. High quality InP layers are obtained with either phosphorus source for growth at a high V/III ratio. The full widths at half-maximum (FWHM) of the main 4 K photoluminescence peak from InP layers grown with phosphine and TBP sources are 1.1 and 1.3 meV, respectively. This 1.3 meV FWHM is the narrowest reported for InP grown by OMVPE with a nonhydride phosphorus source. High quality InP layers can be grown at a lower V/III ratio with the TBP source than with the phosphine source. 1077-3118 10773118 American Institute of Physics (AIP) |
| shingle_catch_all_3 | Saxena, R. R. Fouquet, J. E. Sardi, V. M. Moon, R. L. High quality InP layers grown by organometallic vapor phase epitaxy using tertiarybutylphosphine and phosphine A systematic study compares the quality of InP epitaxial layers grown by low-pressure organometallic vapor phase epitaxy (OMVPE) using triethylindium, phosphine, and tertiarybutylphosphine (TBP) sources. High quality InP layers are obtained with either phosphorus source for growth at a high V/III ratio. The full widths at half-maximum (FWHM) of the main 4 K photoluminescence peak from InP layers grown with phosphine and TBP sources are 1.1 and 1.3 meV, respectively. This 1.3 meV FWHM is the narrowest reported for InP grown by OMVPE with a nonhydride phosphorus source. High quality InP layers can be grown at a lower V/III ratio with the TBP source than with the phosphine source. 1077-3118 10773118 American Institute of Physics (AIP) |
| shingle_catch_all_4 | Saxena, R. R. Fouquet, J. E. Sardi, V. M. Moon, R. L. High quality InP layers grown by organometallic vapor phase epitaxy using tertiarybutylphosphine and phosphine A systematic study compares the quality of InP epitaxial layers grown by low-pressure organometallic vapor phase epitaxy (OMVPE) using triethylindium, phosphine, and tertiarybutylphosphine (TBP) sources. High quality InP layers are obtained with either phosphorus source for growth at a high V/III ratio. The full widths at half-maximum (FWHM) of the main 4 K photoluminescence peak from InP layers grown with phosphine and TBP sources are 1.1 and 1.3 meV, respectively. This 1.3 meV FWHM is the narrowest reported for InP grown by OMVPE with a nonhydride phosphorus source. High quality InP layers can be grown at a lower V/III ratio with the TBP source than with the phosphine source. 1077-3118 10773118 American Institute of Physics (AIP) |
| shingle_title_1 | High quality InP layers grown by organometallic vapor phase epitaxy using tertiarybutylphosphine and phosphine |
| shingle_title_2 | High quality InP layers grown by organometallic vapor phase epitaxy using tertiarybutylphosphine and phosphine |
| shingle_title_3 | High quality InP layers grown by organometallic vapor phase epitaxy using tertiarybutylphosphine and phosphine |
| shingle_title_4 | High quality InP layers grown by organometallic vapor phase epitaxy using tertiarybutylphosphine and phosphine |
| sigel_instance_filter | dkfz geomar wilbert ipn albert |
| source_archive | AIP Digital Archive |
| timestamp | 2024-05-06T08:03:57.517Z |
| titel | High quality InP layers grown by organometallic vapor phase epitaxy using tertiarybutylphosphine and phosphine |
| titel_suche | High quality InP layers grown by organometallic vapor phase epitaxy using tertiarybutylphosphine and phosphine |
| topic | U |
| uid | nat_lic_papers_NLZ218315708 |